Inventor · disambiguated record
Tolis Voutsas
Also filed as: VOUTSAS TOLIS
6 granted patents·279 citations·filing 1996–1999
87Inventor score
Technology areasH10P
Top patents by PatentIndex Score
6 records- 0187US6071796AMethod of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambientSHARP LAB OF AMERICA INC·Filed 1998·Granted Jun 6, 2000·105 cites·17 claims
- 0280US5827773AMethod for forming polycrystalline silicon from the crystallization of microcrystalline siliconSHARP MICROELECT TECH INC·Filed 1997·Granted Oct 27, 1998·58 cites·27 claims
- 0371US5959314APolycrystalline silicon from the crystallization of microcrystalline siliconSHARP LAB OF AMERICA INC·Filed 1998·Granted Sep 28, 1999·36 cites·28 claims
- 0466US6329270B1Laser annealed microcrystalline film and method for sameSHARP LAB OF AMERICA INC·Filed 1999·Granted Dec 11, 2001·36 cites·6 claims
- 0564US6169013B1Method of optimizing crystal grain size in polycrystalline silicon filmsSHARP LAB OF AMERICA INC·Filed 1999·Granted Jan 2, 2001·31 cites·20 claims
- 0644US6383899B1Method of forming polycrystalline semiconductor film from amorphous deposit by modulating crystallization with a combination of pre-annealing and ion implantationSHARP LAB OF AMERICA INC·Filed 1996·Granted May 7, 2002·13 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →