Inventor · disambiguated record
Toshio Yonezawa
Also filed as: AJIMA TAKASHI · HIRAKI SHUNICHI · YONEZAWA TOSHIO
57 granted patents·2 pending applications·1,538 citations·filing 1976–2012
99Inventor score
Files withTOKYO SHIBAURA ELECTRIC CO31MITSUBISHI HEAVY IND LTD8PETOCA LTD3TAKEMOTO OIL & FAT CO LTD3TOSHIBA KK3
Top patents by PatentIndex Score
59 records- 0198US4618878ASemiconductor device having a multilayer wiring structure using a polyimide resinTOSHIBA KK·Filed 1984·Granted Oct 21, 1986·268 cites·7 claims
- 0298US4507673ASemiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Mar 26, 1985·174 cites·5 claims
- 0389US8822567B2Method of producing soil cement slurryKONO TAKAO·Filed 2012·Granted Sep 2, 2014·13 cites·3 claims
- 0489US4798632ANi-based alloy and method for preparing sameMITSUBISHI HEAVY IND LTD·Filed 1987·Granted Jan 17, 1989·57 cites·19 claims
- 0589US4610079AMethod of dicing a semiconductor waferTOKYO SHIBAURA ELECTRIC CO·Filed 1985·Granted Sep 9, 1986·111 cites·3 claims
- 0687US4520041AMethod for forming metallization structure having flat surface on semiconductor substrateTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted May 28, 1985·65 cites·9 claims
- 0786US4334349AMethod of producing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Jun 15, 1982·64 cites·14 claims
- 0885US4161743ASemiconductor device with silicon carbide-glass-silicon carbide passivating overcoatTOKYO SHIBAURA ELECTRIC CO·Filed 1978·Granted Jul 17, 1979·49 cites·22 claims
- 0984US5855663ACarbon fibers for reinforcement of cement and cement composite materialPETOCA LTD·Filed 1997·Granted Jan 5, 1999·49 cites·9 claims
- 1082US4485393ASemiconductor device with selective nitride layer over channel stopTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Nov 27, 1984·37 cites·6 claims
- 1181US5652058ACarbon fiber rovings for reinforcement of concretePETOCA LTD·Filed 1995·Granted Jul 29, 1997·39 cites·6 claims
- 1281US4589004ASemiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each otherTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted May 13, 1986·54 cites·3 claims
- 1381US4561009ASemiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Dec 24, 1985·41 cites·9 claims
- 1480US6937913B2Product design process and product design apparatusTOSHIBA KK·Filed 2001·Granted Aug 30, 2005·34 cites·17 claims
- 1580US5466289AUltra high-strength hydraulic cement compositionsTAKENAKA CORP·Filed 1993·Granted Nov 14, 1995·38 cites·16 claims
- 1675US4433004ASemiconductor device and a method for manufacturing the sameTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Feb 21, 1984·32 cites·11 claims
- 1773US4636832ASemiconductor device with an improved bonding sectionTOKYO SHIBAURA ELECTRIC CO·Filed 1986·Granted Jan 13, 1987·41 cites·4 claims
- 1869US4379726AMethod of manufacturing semiconductor device utilizing outdiffusion and epitaxial depositionTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Apr 12, 1983·33 cites·1 claims
- 1965US4351894AMethod of manufacturing a semiconductor device using silicon carbide maskTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Sep 28, 1982·24 cites·14 claims
- 2064US8172959B2Austenitic stainless steel, manufacturing method for the same, and structure using the sameSAKAGUCHI YASUHIRO·Filed 2005·Granted May 8, 2012·3 cites·11 claims
- 2161US7259197B2Ultra high-strength hydraulic cement compositionsTAKEMOTO OIL & FAT CO LTD·Filed 2004·Granted Aug 21, 2007·6 cites·16 claims
- 2260US5478172AApparatus for feeding ultrafine powder in quantitative batch operationKEIHIN RYOKO CONCRETE IND CORP·Filed 1993·Granted Dec 26, 1995·34 cites·4 claims
- 2360US4778772AMethod of manufacturing a bipolar transistorTOSHIBA KK·Filed 1987·Granted Oct 18, 1988·19 cites·8 claims
- 2458US7265168B2High-strength hydraulic cement compositionsTAKEMOTO OIL & FAT CO LTD·Filed 2004·Granted Sep 4, 2007·5 cites·12 claims
- 2556US5686181ACarbon fibers for reinforcement of cement and cement composite materialPETOCA LTD·Filed 1995·Granted Nov 11, 1997·13 cites·4 claims
- 2656US4240096AFluorine-doped P type siliconTOKYO SHIBAURA ELECTRIC CO·Filed 1978·Granted Dec 16, 1980·14 cites·4 claims
- 2755US4542400ASemiconductor device with multi-layered structureTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Sep 17, 1985·19 cites·12 claims
- 2854US4146413AMethod of producing a P-N junction utilizing polycrystalline siliconTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted Mar 27, 1979·16 cites·2 claims
- 2951US4226650AMethod of reducing emitter dip in transistors utilizing specifically paired dopantsTAKAHASHI KOUICHI·Filed 1978·Granted Oct 7, 1980·10 cites·4 claims
- 3051US4123564AMethod of producing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted Oct 31, 1978·13 cites·21 claims
- 3147US4263067AFabrication of transistors having specifically paired dopantsTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Apr 21, 1981·10 cites·4 claims
- 3245US7601770B2Multi-functional admixtures for concreteTAKEMOTO OIL & FAT CO LTD·Filed 2004·Granted Oct 13, 2009·2 cites·2 claims
- 3344US5122206APrecipitation hardening nickel base single crystal cast alloyMITSUBISHI METAL CORP·Filed 1990·Granted Jun 16, 1992·8 cites·15 claims
- 3444US4587928AApparatus for producing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted May 13, 1986·5 cites·11 claims
- 3544US4566174ASemiconductor device and method for manufacturing the sameTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jan 28, 1986·11 cites·6 claims
- 3644US2011136946A1Slurry compositions for ground improvement using blast-furnace slag cement and method of producing soil cement slurry by using sameKONO TAKAO·Filed 2011·Application pending·0 cites
- 3742US4525523ANegative-working photoresist coating compositionKANTO KAGAKU·Filed 1983·Granted Jun 25, 1985·7 cites·8 claims
- 3842US4462856ASystem for etching a metal film on a semiconductor waferTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jul 31, 1984·10 cites·3 claims
- 3942US4224636ASemiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layerTOKYO SHIBAURA ELECTRIC CO·Filed 1978·Granted Sep 23, 1980·9 cites·8 claims
- 4041US6190785B1Spray coating powder material and high-temperature components coated therewithMITSUBISHI HEAVY IND LTD·Filed 1999·Granted Feb 20, 2001·8 cites·15 claims
- 4140US4479830AMethod of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment markerTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Oct 30, 1984·9 cites·5 claims
- 4239US4667218ANPN transistor with base double doped with arsenic and boronTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted May 19, 1987·6 cites·5 claims
- 4339US4560642AMethod of manufacturing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Dec 24, 1985·8 cites·3 claims
- 4438US4715909ANickel-chromium alloy in stress corrosion cracking resistanceMITSUBISHI HEAVY IND LTD·Filed 1986·Granted Dec 29, 1987·4 cites·2 claims
- 4538US4200969ASemiconductor device with multi-layered metalizationsTOKYO SHIBAURA ELECTRIC CO·Filed 1977·Granted May 6, 1980·6 cites·12 claims
- 4637US5976275AHigh-nickel austenitic stainless steel resistant to degradation by neutron irradiationMITSUBISHI HEAVY IND LTD·Filed 1996·Granted Nov 2, 1999·5 cites·8 claims
- 4737US4415372AMethod of making transistors by ion implantations, electron beam irradiation and thermal annealingTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Nov 15, 1983·7 cites·5 claims
- 4837US4403392AMethod of manufacturing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Sep 13, 1983·9 cites·8 claims
- 4936US4521256AMethod of making integrated devices having long and short minority carrier lifetimesTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jun 4, 1985·7 cites·7 claims
- 5035US4714501AMethod for thermal treatment of alloy for heat transfer pipesMITSUBISHI HEAVY IND LTD·Filed 1985·Granted Dec 22, 1987·4 cites·1 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →