Inventor · disambiguated record
Trong Huynh Bao
Also filed as: Huynh Bao Trong
11 granted patents·2 pending applications·36 citations·filing 2016–2020
86Inventor score
Files withIMEC VZW13
Top patents by PatentIndex Score
13 records- 0189US10720363B2Method of forming vertical transistor deviceIMEC VZW·Filed 2018·Granted Jul 21, 2020·6 cites·19 claims
- 0288US11227645B2Spin-torque transfer switchable magnetic tunnel junction unit and a memory deviceIMEC VZW·Filed 2019·Granted Jan 18, 2022·4 cites·17 claims
- 0387US11087837B2Circuit cell for a memory device or logic deviceIMEC VZW·Filed 2019·Granted Aug 10, 2021·10 cites·20 claims
- 0487US10332588B2Static random access memory device having interconnected stacks of transistorsIMEC VZW·Filed 2017·Granted Jun 25, 2019·7 cites·18 claims
- 0584US11527709B2SOT multibit memory cellIMEC VZW·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
- 0675US11201093B2Method of manufacturing a semiconductor device including the horizontal channel FET and the vertical channel FETIMEC VZW·Filed 2020·Granted Dec 14, 2021·1 cites·19 claims
- 0774US10325647B2Non-volatile SRAM cell using resistive memory elementsIMEC VZW·Filed 2017·Granted Jun 18, 2019·4 cites·11 claims
- 0873US11018235B2Vertically stacked semiconductor devices having vertical channel transistorsIMEC VZW·Filed 2016·Granted May 25, 2021·2 cites·19 claims
- 0947US11832525B2Dual magnetic tunnel junction stackIMEC VZW·Filed 2020·Granted Nov 28, 2023·0 cites·19 claims
- 1045US11217488B2Method of forming a semiconductor deviceIMEC VZW·Filed 2020·Granted Jan 4, 2022·0 cites·21 claims
- 1145US10522552B2Method of fabricating vertical transistor deviceIMEC VZW·Filed 2018·Granted Dec 31, 2019·0 cites·15 claims
- 1242US2018190670A1Standard cell having vertical transistorsIMEC VZW·Filed 2017·Application pending·0 cites
- 1341US2020312725A1Method of forming a semiconductor deviceIMEC VZW·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →