Inventor · disambiguated record
Tsiu C. Chan
Also filed as: CHAN TSIU C · CHAN TSIU CHIU
108 granted patents·2 pending applications·2,878 citations·filing 1976–2004
99Inventor score
Files withST MICROELECTRONICS INC56SGS THOMSON MICROELECTRONICS41MOSTEK CORP7STMICROCELECTRONICS INC1STMICROELECTRONIC INC1
Top patents by PatentIndex Score
110 records- 0194US6124765AIntegrated released beam oscillator and associated methodsST MICROELECTRONICS INC·Filed 1997·Granted Sep 26, 2000·104 cites·67 claims
- 0293US6194276B1Radiation hardened semiconductor memoryST MICROELECTRONICS INC·Filed 2000·Granted Feb 27, 2001·54 cites·6 claims
- 0393US5623438AVirtual ground read only memory circuitSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Apr 22, 1997·85 cites·4 claims
- 0493US4125854ASymmetrical cell layout for static RAMMOSTEK CORP·Filed 1976·Granted Nov 14, 1978·76 cites·11 claims
- 0592US4868138AMethod for forming a self-aligned source/drain contact for an MOS transistorSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Sep 19, 1989·74 cites·13 claims
- 0691US6271063B1Method of making an SRAM cell and structureST MICROELECTRONICS INC·Filed 2000·Granted Aug 7, 2001·90 cites·7 claims
- 0789US5329143AESD protection circuitSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Jul 12, 1994·92 cites·17 claims
- 0887US5682055AMethod of forming planarized structures in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Oct 28, 1997·62 cites·14 claims
- 0987US4599118AMethod of making MOSFET by multiple implantations followed by a diffusion stepMOSTEK CORP·Filed 1984·Granted Jul 8, 1986·65 cites·2 claims
- 1086US6278337B1Integrated released beam oscillator and associated methodsST MICROELECTRONICS INC·Filed 1999·Granted Aug 21, 2001·44 cites·25 claims
- 1186US5683924AMethod of forming raised source/drain regions in a integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Nov 4, 1997·66 cites·21 claims
- 1286US5006481AMethod of making a stacked capacitor DRAM cellSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Apr 9, 1991·65 cites·5 claims
- 1385US6100194ASilver metallization by damascene methodST MICROELECTRONICS INC·Filed 1998·Granted Aug 8, 2000·64 cites·27 claims
- 1485US5116776AMethod of making a stacked copacitor for dram cellSGS THOMSON MICROELECTRONICS·Filed 1989·Granted May 26, 1992·45 cites·15 claims
- 1584US5272371AElectrostatic discharge protection structureSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Dec 21, 1993·64 cites·20 claims
- 1683US6235550B1Integrated sensor having plurality of released beams for sensing acceleration and associated methodsST MICROELECTRONICS INC·Filed 2000·Granted May 22, 2001·26 cites·12 claims
- 1783US5706226ALow voltage CMOS SRAMSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Jan 6, 1998·79 cites·16 claims
- 1882US5187114AMethod of making SRAM cell and structure with polycrystalline P-channel load devicesSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Feb 16, 1993·46 cites·16 claims
- 1982US5116777AMethod for fabricating semiconductor devices by use of an N+ buried layer for complete isolationSGS THOMSON MICROELECTRONICS·Filed 1990·Granted May 26, 1992·72 cites·15 claims
- 2081US4392210AOne transistor-one capacitor memory cellMOSTEK CORP·Filed 1978·Granted Jul 5, 1983·20 cites·5 claims
- 2180US6005296ALayout for SRAM structureST MICROELECTRONICS INC·Filed 1997·Granted Dec 21, 1999·40 cites·23 claims
- 2280US5821600AIsolation by active transistors with grounded gatesST MICROELECTRONICS INC·Filed 1996·Granted Oct 13, 1998·51 cites·18 claims
- 2380US5798278AMethod of forming raised source/drain regions in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Aug 25, 1998·45 cites·20 claims
- 2479US6140684ASRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacersSTMICROELECTRONIC INC·Filed 1997·Granted Oct 31, 2000·56 cites·18 claims
- 2579US6034886AShadow memory for a SRAM and methodST MICROELECTRONICS INC·Filed 1998·Granted Mar 7, 2000·41 cites·9 claims
- 2679US6005790AFloating gate content addressable memoryST MICROELECTRONICS INC·Filed 1998·Granted Dec 21, 1999·47 cites·28 claims
- 2779US5917226AIntegrated released beam, thermo-mechanical sensor for sensing temperature variations and associated methodsST MICROELECTRONICS INC·Filed 1997·Granted Jun 29, 1999·49 cites·40 claims
- 2878US5151387APolycrystalline silicon contact structureSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Sep 29, 1992·51 cites·7 claims
- 2976US6128243AShadow memory for a SRAM and methodST MICROELECTRONICS INC·Filed 1999·Granted Oct 3, 2000·34 cites·11 claims
- 3076US5883544AIntegrated circuit actively biasing the threshold voltage of transistors and related methodsST MICROELECTRONICS INC·Filed 1996·Granted Mar 16, 1999·32 cites·36 claims
- 3176US5801396AInverted field-effect device with polycrystalline silicon/germanium channelST MICROELECTRONICS INC·Filed 1995·Granted Sep 1, 1998·34 cites·22 claims
- 3275US6380598B1Radiation hardened semiconductor memoryST MICROELECTRONICS INC·Filed 1999·Granted Apr 30, 2002·38 cites·21 claims
- 3375US5196233AMethod for fabricating semiconductor circuitsSGS THOMSON MICROELECTRONICS·Filed 1989·Granted Mar 23, 1993·26 cites·4 claims
- 3474US6091630ARadiation hardened semiconductor memoryST MICROELECTRONICS INC·Filed 1999·Granted Jul 18, 2000·26 cites·20 claims
- 3573US6295224B1Circuit and method of fabricating a memory cell for a static random access memoryST MICROELECTRONICS INC·Filed 1999·Granted Sep 25, 2001·28 cites·20 claims
- 3672US6656803B2Radiation hardened semiconductor memorySTMICROCELECTRONICS INC·Filed 2001·Granted Dec 2, 2003·18 cites·10 claims
- 3772US6058778AIntegrated sensor having plurality of released beams for sensing accelerationST MICROELECTRONICS INC·Filed 1997·Granted May 9, 2000·25 cites·32 claims
- 3872US5795800AIntegrated circuit fabrication method with buried oxide isolationSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Aug 18, 1998·33 cites·25 claims
- 3972US5135888AField effect device with polycrystalline silicon channelSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Aug 4, 1992·33 cites·10 claims
- 4071US5929695AIntegrated circuit having selective bias of transistors for low voltage and low standby current and related methodsST MICROELECTRONICS INC·Filed 1997·Granted Jul 27, 1999·32 cites·25 claims
- 4171US5770892AField effect device with polycrystalline silicon channelSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jun 23, 1998·33 cites·6 claims
- 4268US4297721AExtremely low current load device for integrated circuitMOSTEK CORP·Filed 1979·Granted Oct 27, 1981·28 cites·10 claims
- 4368US4290185AMethod of making an extremely low current load device for integrated circuitMOSTEK CORP·Filed 1979·Granted Sep 22, 1981·24 cites·5 claims
- 4467US6455884B1Radiation hardened semiconductor memory with active isolation regionsST MICROELECTRONICS INC·Filed 2000·Granted Sep 24, 2002·15 cites·32 claims
- 4567US5705427AMethod of forming a landing pad structure in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jan 6, 1998·30 cites·33 claims
- 4667US5204279AMethod of making SRAM cell and structure with polycrystalline p-channel load devicesSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Apr 20, 1993·28 cites·18 claims
- 4766US5702979AMethod of forming a landing pad structure in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Dec 30, 1997·19 cites·35 claims
- 4866US4679300AMethod of making a trench capacitor and dram memory cellTHOMSON COMPONENTS MOSTEK CORP·Filed 1985·Granted Jul 14, 1987·23 cites·6 claims
- 4965US6028343AIntegrated released beam sensor for sensing acceleration and associated methodsST MICROELECTRONICS INC·Filed 1997·Granted Feb 22, 2000·22 cites·16 claims
- 5065US5894160AMethod of forming a landing pad structure in an integrated circuitST MICROELECTRONICS INC·Filed 1996·Granted Apr 13, 1999·18 cites·18 claims
Showing the top 50 of 110 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →