Inventor · disambiguated record
Tse-An Chen
Also filed as: CHEN TSE-AN
22 granted patents·8 pending applications·8 citations·filing 2019–2025
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30
Top patents by PatentIndex Score
30 records- 0196US11245024B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·4 cites·20 claims
- 0290US11244866B2Low dimensional material device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·2 cites·20 claims
- 0384US12151213B2Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 0484US11688605B2Semiconductor device with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 27, 2023·1 cites·20 claims
- 0584US2025087482A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0683US2024390861A1Method of Manufacturing Semiconductor Devices Including The Steps of Removing One or More of the Nanotubes from the Stack of Nanotubes, and/or Removing Spacers that Surrounds Each of the Plurality of Nanotubes, and Forming Gate Dielectric and/or Gate Electrode to the NanotubesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0782US12224334B2Semiconductor device with gate dielectric formed using selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 0881US12033850B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
- 0980US12490478B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 1080US2025133778A1Fin field-effect transistor device with low-dimensional material and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1179US12191144B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 1279US2025329534A1Semiconductor device with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1378US12400860B2Semiconductor device with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 1478US11749528B2Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·0 cites·20 claims
- 1577US2024387642A1Transistor, manufacturing method of semiconductor device, and manufacturing method of hbnc layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1676US12211931B2Fin field-effect transistor device with low-dimensional material and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 1776US11699739B2Semiconductor device with gate dielectric formed using selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 11, 2023·0 cites·20 claims
- 1875US12237375B2Semiconductor structure of stacked two-dimensional material layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 1975US11094811B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·1 cites·20 claims
- 2074US2025142919A1Semiconductor device with gate dielectric formed using selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2173US11342181B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 2273US2025203978A1Method of forming stacked unit layers and stacked two-dimensional material layers, and method of forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2372US12230680B2Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 18, 2025·0 cites·20 claims
- 2471US12211930B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
- 2570US11508572B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 2669US2025159956A1Transistor, manufacturing method of semiconductor device, and manufacturing method of hbnc layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2768US11476356B2Fin field-effect transistor device with low-dimensional material and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 2867US11784225B2Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 2954US11158807B2Field effect transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·20 claims
- 3052US11289582B2Single-crystal hexagonal boron nitride layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →