Inventor · disambiguated record

Tsung-Yu Chiang

Also filed as: CHIANG TSUNG-YU

56 granted patents·12 pending applications·178 citations·filing 2013–2025

98Inventor score

Technology areasH10P H10D H10W H01L G06F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD65 INST INFORMATION INDUSTRY1 TAIWAN SEMICONDUCTOR MANUFACTRING COMPANY LTD1 TAIWAN SEMICONDUCTOR MFG1

Top patents by PatentIndex Score

68 records

0196US9524965B2Gate structures with various widths and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 20, 2016·23 cites·20 claims
0294US9184087B2Mechanisms for forming FinFETs with different fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 10, 2015·12 cites·20 claims
0393US9515184B2Semiconductor arrangement with multiple-height fins and substrate trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 6, 2016·20 cites·20 claims
0492US10515902B2Back-end-of-line (BEOL) arrangement with multi-height interlayer dielectric (ILD) structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·6 cites·20 claims
0592US9223750B2Dynamic tag generating apparatus and dynamic tag generating method thereof for use in display apparatusINST INFORMATION INDUSTRY·Filed 2013·Granted Dec 29, 2015·30 cites·6 claims
0691US9899265B2Gate structures with various widths and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·5 cites·20 claims
0791US9583362B2Metal gate structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·12 cites·19 claims
0890US9899382B2Fin field effect transistor (FinFET) device structure with different gate profile and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·8 cites·18 claims
0990US9577067B2Metal gate and manufuacturing process thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·10 cites·18 claims
1090US9257505B2Structures and formation methods of finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·12 cites·20 claims
1186US10050030B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·4 cites·20 claims
1286US2025364255A1Barrier layer for contact structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1385US9324577B2Modified self-aligned contact process and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 26, 2016·5 cites·13 claims
1484US10840143B2Methods for forming a semiconductor arrangement of fins having multiple heights and an alignment markTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·2 cites·20 claims
1584US9947766B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 17, 2018·2 cites·20 claims
1683US10707316B2Structure and formation method of semiconductor device structure with gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 7, 2020·3 cites·20 claims
1783US10522412B2Gate structures with various widths and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·2 cites·20 claims
1882US10957653B2Methods for manufacturing semiconductor arrangements using photoresist masksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·2 cites·20 claims
1982US9911658B2Methods for forming a semiconductor arrangement with multiple-height fins and substrate trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·2 cites·20 claims
2082US9559011B2Mechanisms for forming FinFETs with different fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·2 cites·19 claims
2179US12469708B2Barrier layer for contact structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
2279US9122828B2Apparatus and method for designing an integrated circuit layout having a plurality of cell technologiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 1, 2015·5 cites·18 claims
2378US9870998B2Semiconductor arrangement having an overlay alignment mark with a height shorter than a neighboring gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·2 cites·20 claims
2477US10134626B2Mechanisms for forming FinFETs with different fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·1 cites·20 claims
2577US2024387733A1Semiconductor device structure with gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2676US12382701B2Method of forming semiconductor device structure with gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
2776US2025366186A1Reduction of damages to source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2876US2025331236A1Nanosheet transistors with reduced sub-channel leakage and the methods offorming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2975US9842761B2Mechanisms for forming FinFETs with different fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 12, 2017·1 cites·20 claims
3074US9704970B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·1 cites·20 claims
3174US2024387549A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3273US11469144B2Semiconductor arrangement with fin features having different heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
3373US9178066B2Methods for forming a semiconductor arrangement with structures having different heightsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 3, 2015·2 cites·20 claims
3472US9306023B2Semiconductor device with gate stacks and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 5, 2016·2 cites·20 claims
3571US2025311300A1Nanosheet transistors with reduced sub-channel leakage and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3670US9711611B2Modified self-aligned contact process and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·1 cites·20 claims
3769US9508590B2Methods and apparatus of metal gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 29, 2016·1 cites·20 claims
3869US2025323090A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3967US10879127B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
4065US12132111B2Formation method of semiconductor device structure with gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 29, 2024·0 cites·20 claims
4165US11682710B2Structure and formation method of semiconductor device structure with gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 20, 2023·0 cites·20 claims
4264US12148753B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
4364US11830930B2Circuit devices with gate sealsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
4463US12477818B2Reduction of damages to source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
4563US11637018B2Barrier layer for contact structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·0 cites·20 claims
4662US12406876B2Semiconductor structure including isolation structure with dielectric stack and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
4761US12389655B2Circuit devices with gate sealsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
4861US10177036B2Semiconductor arrangement with fins having multiple heights and a dielectric layer recessed in the substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 8, 2019·0 cites·20 claims
4960US2024379660A1Semiconductor Device and Fabricating Method ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
5059US9231067B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 5, 2016·0 cites·20 claims

Showing the top 50 of 68 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →