Inventor · disambiguated record
Tso-Hung Fan
Also filed as: FAN TSO-HUNG
30 granted patents·8 pending applications·636 citations·filing 1996–2008
97Inventor score
Top patents by PatentIndex Score
38 records- 0196US6607957B1Method for fabricating nitride read only memoryMACRONIX INT CO LTD·Filed 2002·Granted Aug 19, 2003·137 cites·18 claims
- 0296US6512696B1Method of programming and erasing a SNNNS type non-volatile memory cellMACRONIX INT CO LTD·Filed 2001·Granted Jan 28, 2003·140 cites·18 claims
- 0393US6444523B1Method for fabricating a memory device with a floating gateMACRONIX INT CO LTD·Filed 2001·Granted Sep 3, 2002·63 cites·19 claims
- 0490US6958934B2Method of programming and erasing multi-level flash memoryMACRONIX INT CO LTD·Filed 2002·Granted Oct 25, 2005·43 cites·4 claims
- 0587US6458642B1Method of fabricating a sonos deviceMACRONIX INT CO LTD·Filed 2001·Granted Oct 1, 2002·71 cites·10 claims
- 0676US6482706B1Method to scale down device dimension using spacer to confine buried drain implantMACRONIX INT CO LTD·Filed 2001·Granted Nov 19, 2002·16 cites·20 claims
- 0775US6834013B2Method for programming and erasing non-volatile memory with nitride tunneling layerMACRONIX INT CO LTD·Filed 2001·Granted Dec 21, 2004·19 cites·6 claims
- 0873US6649971B1Nitride read-only memory cell for improving second-bit effect and method for making thereofMACRONIX INT CO LTD·Filed 2002·Granted Nov 18, 2003·18 cites·12 claims
- 0972US6785163B2Trim circuit and method for tuning a current level of a reference cell in a flash memoryMACRONIX INT CO LTD·Filed 2003·Granted Aug 31, 2004·19 cites·6 claims
- 1072US6587387B1Device and method for testing mask ROM for bitline to bitline isolation leakageMACRONIX INT CO LTD·Filed 2002·Granted Jul 1, 2003·18 cites·12 claims
- 1166US6440803B1Method of fabricating a mask ROM with raised bit-line on each buried bit-lineMACRONIX INT CO LTD·Filed 2002·Granted Aug 27, 2002·10 cites·20 claims
- 1260US7969699B2ESD protection trigger circuitTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 28, 2011·3 cites·5 claims
- 1360US6706575B2Method for fabricating a non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Mar 16, 2004·7 cites·20 claims
- 1459US5648128AMethod for enhancing the growth rate of a silicon dioxide layer grown by liquid phase depositionNAT SCIENCE COUNCIL·Filed 1996·Granted Jul 15, 1997·23 cites·4 claims
- 1555US6531361B1Fabrication method for a memory deviceMACRONIX INT CO LTD·Filed 2002·Granted Mar 11, 2003·5 cites·16 claims
- 1654US6709921B2Fabrication method for a flash memory device with a split floating gate and a structure thereofMACRONIX INT CO LTD·Filed 2001·Granted Mar 23, 2004·6 cites·8 claims
- 1752US6643176B1Reference current generation circuit for multiple bit flash memoryMACRONIX INT CO LTD·Filed 2002·Granted Nov 4, 2003·7 cites·7 claims
- 1851US6838691B2Chalcogenide memory and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2002·Granted Jan 4, 2005·4 cites·8 claims
- 1951US6590266B12-bit mask ROM device and fabrication method thereofMACRONIX INT CO LTD·Filed 2002·Granted Jul 8, 2003·4 cites·19 claims
- 2050US6613595B2Test structure and method for flash memory tunnel oxide qualityMACRONIX INT CO LTD·Filed 2002·Granted Sep 2, 2003·2 cites·18 claims
- 2150US6514807B1Method for fabricating semiconductor device applied system on chipMACRONIX INT CO LTD·Filed 2001·Granted Feb 4, 2003·4 cites·14 claims
- 2249US7173849B2Method of programming and erasing multi-level flash memoryMACRONIX INT CO LTD·Filed 2005·Granted Feb 6, 2007·1 cites·6 claims
- 2348US6713821B2Structure of a mask ROM deviceMACRONIX INT CO LTD·Filed 2002·Granted Mar 30, 2004·3 cites·9 claims
- 2448US6455376B1Method of fabricating flash memory with shallow and deep junctionsMACRONIX INT CO LTD·Filed 2001·Granted Sep 24, 2002·3 cites·20 claims
- 2545US6919607B2Structure of two-bit mask read-only memory device and fabricating method thereofMACRONIX INT CO LTD·Filed 2002·Granted Jul 19, 2005·2 cites·11 claims
- 2645US6687160B1Reference current generation circuit for multiple bit flash memoryMACRONIX INT CO LTD·Filed 2002·Granted Feb 3, 2004·4 cites·6 claims
- 2745US6665212B1Reference current generating circuit of multiple bit flash memoryMACRONIX INT CO LTD·Filed 2002·Granted Dec 16, 2003·4 cites·6 claims
- 2841US2007159893A1Method of programming and erasing multi-level flash memoryFAN TSO-HUNG·Filed 2006·Application pending·0 cites
- 2938US6790730B2Fabrication method for mask read only memory deviceMACRONIX INT CO LTD·Filed 2002·Granted Sep 14, 2004·0 cites·13 claims
- 3037US2003107052A1Structure and method for fabricating a semiconductor deviceFiled 2002·Application pending·0 cites
- 3136US7002849B2Method for programming and erasing non-volatile memory with nitride tunneling layerMACRONIX INT CO LTD·Filed 2004·Granted Feb 21, 2006·0 cites·4 claims
- 3236US6917073B2ONO flash memory array for improving a disturbance between adjacent memory cellsMACRONIX INT CO LTD·Filed 2003·Granted Jul 12, 2005·0 cites·3 claims
- 3335US2003137000A1Flash memory with virtual ground schemeFiled 2002·Application pending·0 cites
- 3434US2003034516A1Structure of a non-volatile memoryFiled 2001·Application pending·0 cites
- 3534US2003089935A1Non-volatile semiconductor memory device with multi-layer gate insulating structureMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
- 3634US2003082892A1Method for reducing the drain coupling ratio of floating gate deviceMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
- 3734US2003134463A1Method for fabricating a high voltage deviceFiled 2002·Application pending·0 cites
- 3832US2003174540A1Device and method for converging erased flash memoriesFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →