Inventor · disambiguated record
Tsai-Jung Ho
Also filed as: HO TSAI-JUNG
25 granted patents·21 pending applications·1,109 citations·filing 2014–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD46
Top patents by PatentIndex Score
46 records- 0198US9859386B2Self aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·496 cites·20 claims
- 0298US9548366B1Self aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 17, 2017·583 cites·20 claims
- 0397US11289417B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·14 claims
- 0494US11164948B2Field-effect transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 2, 2021·6 cites·20 claims
- 0593US11742399B2Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·2 cites·20 claims
- 0692US9818846B2Selectively deposited spacer film for metal gate sidewall protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·7 cites·20 claims
- 0789US11164789B1Method for forming semiconductor device that includes covering metal gate with multilayer dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 2, 2021·2 cites·20 claims
- 0887US9478623B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·7 cites·20 claims
- 0985US12368098B2Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 1085US2025344422A1Dummy hybrid film for self alignment contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1185US2025344449A1Self-Aligned Contact Hard Mask Structure of Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1285US2025309103A1Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1383US2025311413A1Finfet device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1482US12293947B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 1582US11355399B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·1 cites·20 claims
- 1681US12255240B2Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 1781US2025261437A1Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1880US2025359147A1Bottom dielectric isolation and methods of forming the same in field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1979US2025343051A1Method for forming a semiconductor device having a gate mask composing of a semiconductor layer over a dielectric layer formed on gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2079US2025349600A1Dielectric Layers Having Nitrogen-Containing Crusted SurfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2179US2024379815A1Dummy hybrid film for self alignment contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2279US2024363713A1Self-Aligned Contact Hard Mask Structure of Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2377US2024363722A1Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2476US12471357B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 2576US12094952B2Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 2676US11973027B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·14 claims
- 2776US11842930B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 2875US12087838B2Self-aligned contact hard mask structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 2975US2024021619A1Finfet device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3075US2024387730A1Semiconductor device structure having dislocation stress memorization and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3175US2025323099A1Hybrid film scheme for self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3275US2024387701A1Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3374US2025185338A1Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3473US12302595B2Dummy hybrid film for self-alignment contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 3571US12154973B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 3669US12107163B2Semiconductor device structure having dislocation stress memorization and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
- 3768US11626482B2Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 3867US11728218B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3966US2023317469A1Semiconductor Device and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4066US2023282751A1Bottom dielectric isolation and methods of forming the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4165US2022231023A1Finfet device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 4263US12417948B2Hybrid film scheme for self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 16, 2025·0 cites·20 claims
- 4357US9865709B2Selectively deposited spacer film for metal gate sidewall protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·0 cites·20 claims
- 4456US2024145302A1Semiconductor device and method for manufacturing interconnecting metal layer thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4554US2024047270A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4653US9887090B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →