Inventor · disambiguated record
Tsuyoshi Horikawa
Also filed as: HORIKAWA TSUYOSHI · SATO TAKEHIKO
34 granted patents·2 pending applications·683 citations·filing 1992–2018
98Inventor score
Files withMITSUBISHI ELECTRIC CORP24RENESAS ELECTRONICS CORP3NEC CORP2OKI ELECTRIC IND CO LTD2RENESAS TECH CORP2
Top patents by PatentIndex Score
36 records- 0188US6110291AThin film forming apparatus using laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 29, 2000·67 cites·3 claims
- 0287US6563182B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 13, 2003·43 cites·12 claims
- 0387US6273957B1Vaporizing device for CVD source materials and CVD apparatus employing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 14, 2001·28 cites·20 claims
- 0486US9335475B2Method of manufacturing an optical device having a stepwise or tapered light input/output partOKI ELECTRIC IND CO LTD·Filed 2014·Granted May 10, 2016·8 cites·16 claims
- 0586US5834060AHigh dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin filmMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 10, 1998·62 cites·3 claims
- 0685US6470144B1Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 22, 2002·66 cites·4 claims
- 0783US9869815B2Optical device having a stepwise or tapered light input/output part and manufacturing method thereforOKI ELECTRIC IND CO LTD·Filed 2016·Granted Jan 16, 2018·4 cites·5 claims
- 0883US6638880B2Chemical vapor deposition apparatus and a method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 28, 2003·23 cites·3 claims
- 0980US6780476B2Method of forming a film using chemical vapor depositionRENESAS TECH CORP·Filed 2002·Granted Aug 24, 2004·22 cites·13 claims
- 1078US6312526B1Chemical vapor deposition apparatus and a method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 6, 2001·45 cites·15 claims
- 1178US6101085AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 8, 2000·40 cites·4 claims
- 1276US6239460B1Semiconductor device which includes a capacitor having a lower electrode formed of iridium or rutheniumMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 29, 2001·36 cites·7 claims
- 1376US6179920B1CVD apparatus for forming thin film having high dielectric constantMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 30, 2001·43 cites·5 claims
- 1475US10340399B2Optical devicePHOTONICS ELECTRONICS TECHNOLOGY RES ASS·Filed 2016·Granted Jul 2, 2019·2 cites·4 claims
- 1575US6110283AChemical vapor deposition apparatusMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 29, 2000·47 cites·18 claims
- 1674US8351805B2Power saving processing apparatus, image forming apparatus, and computer readable medium that are adaptable to abnormalitiesFUJI XEROX CO LTD·Filed 2010·Granted Jan 8, 2013·2 cites·10 claims
- 1773US6049103ASemiconductor capacitorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 11, 2000·30 cites·2 claims
- 1867US10162110B2Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 25, 2018·1 cites·20 claims
- 1964US6512885B1Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 28, 2003·9 cites·7 claims
- 2059US6187622B1Semiconductor memory device and method for producing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 13, 2001·19 cites·16 claims
- 2158US5231282AOptical writing type liquid crystal light valve and writing apparatus thereforMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 27, 1993·20 cites·3 claims
- 2256US7397094B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Jul 8, 2008·1 cites·16 claims
- 2356US5989635AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 23, 1999·14 cites·1 claims
- 2454US6235649B1Method of forming high dielectric constant thin film and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 22, 2001·16 cites·8 claims
- 2552US10247882B2Optical waveguide circuit and method of fabricating sameNEC CORP·Filed 2017·Granted Apr 2, 2019·0 cites·18 claims
- 2649US5939744ASemiconductor device with x-ray absorption layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 17, 1999·10 cites·4 claims
- 2746US2018284559A1Electro-optic modulatorNEC CORP·Filed 2018·Application pending·0 cites
- 2845US6420191B2Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or rutheniumMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 16, 2002·2 cites·10 claims
- 2945US5882410AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 16, 1999·11 cites·1 claims
- 3044US10078182B2Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 18, 2018·0 cites·14 claims
- 3142US2001039923A1Vaporizing device for CVD source materials and CVD apparatus employing the sameFiled 2001·Application pending·0 cites
- 3241US6448191B2Method of forming high dielectric constant thin film and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 10, 2002·0 cites·6 claims
- 3341US6117482AMethod and apparatus for monitoring CVD liquid source for forming thin film with high dielectric constantMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Sep 12, 2000·8 cites·6 claims
- 3440US9985149B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted May 29, 2018·0 cites·9 claims
- 3532US6165556AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 26, 2000·1 cites·4 claims
- 3629US5281806AOptical writing type liquid crystal light valve and writing apparatus thereforMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 25, 1994·3 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →