Inventor · disambiguated record
Tsung-Hsun Huang
Also filed as: HUANG TSUNG-HSUN
10 granted patents·106 citations·filing 2002–2007
88Inventor score
Top patents by PatentIndex Score
10 records- 0181US6653203B1Thin sidewall multi-step HDP deposition method to achieve completely filled high aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 25, 2003·33 cites·13 claims
- 0278US7799654B2Reduced refractive index and extinction coefficient layer for enhanced photosensitivityTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 21, 2010·4 cites·23 claims
- 0378US6833578B1Method and structure improving isolation between memory cell passing gate and capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 21, 2004·23 cites·21 claims
- 0469US7805258B2System and method for film stress and curvature gradient mapping for screening problematic wafersTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 28, 2010·3 cites·18 claims
- 0567US6780731B1HDP gap-filling process for structures with extra step at side-wallTAIWAN SEMICONDUCTORY MFG CO L·Filed 2002·Granted Aug 24, 2004·18 cites·12 claims
- 0666US6869837B1Methods of fabricating a word-line spacer for wide over-etching window on outside diameter (OD) and strong fenceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 22, 2005·11 cites·39 claims
- 0759US7180116B2Self-aligned metal electrode to eliminate native oxide effect for metal insulator semiconductor (MIS) capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 20, 2007·7 cites·21 claims
- 0857US7199001B2Method of forming MIM capacitor electrodesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 3, 2007·7 cites·10 claims
- 0947US7622347B2Self-aligned metal electrode to eliminate native oxide effect for metal insulator semiconductor (MIS) capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 24, 2009·0 cites·27 claims
- 1041US7786552B2Semiconductor device having hydrogen-containing layerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 31, 2010·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →