Inventor · disambiguated record

Tsung-Yi Huang

Also filed as: HUANG TSUNG-YI

109 granted patents·37 pending applications·271 citations·filing 2000–2024

99Inventor score

Technology areasH10D H10P H10W H01L G01B

Files withHUANG TSUNG-YI54 RICHTEK TECHNOLOGY CORP44 TAIWAN SEMICONDUCTOR MFG18 HUANG CHIH-FANG7 YANG CHING YAO4

Top patents by PatentIndex Score

146 records

0192US8159029B2High voltage device having reduced on-state resistanceSU RU-YI·Filed 2008·Granted Apr 17, 2012·21 cites·20 claims
0292US8143130B1Method of manufacturing depletion MOS deviceHUANG TSUNG-YI·Filed 2010·Granted Mar 27, 2012·15 cites·8 claims
0391US9853099B1Double diffused metal oxide semiconductor device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2017·Granted Dec 26, 2017·9 cites·10 claims
0490US7205630B2Method and apparatus for a semiconductor device having low and high voltage transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 17, 2007·27 cites·21 claims
0588US8575693B1Double diffused metal oxide semiconductor deviceHUANG TSUNG-YI·Filed 2012·Granted Nov 5, 2013·11 cites·10 claims
0688US7960786B2Breakdown voltages of ultra-high voltage devices by forming tunnelsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 14, 2011·17 cites·20 claims
0786US8389341B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2011·Granted Mar 5, 2013·8 cites·14 claims
0884US8772900B2Trench Schottky barrier diode and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Granted Jul 8, 2014·7 cites·10 claims
0984US7508032B2High voltage device with low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 24, 2009·13 cites·18 claims
1084US6468870B1Method of fabricating a LDMOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 22, 2002·37 cites·17 claims
1183US10418482B2High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2018·Granted Sep 17, 2019·3 cites·36 claims
1283US7888734B2High-voltage MOS devices having gates extending into recesses of substratesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Feb 15, 2011·9 cites·20 claims
1383US7768071B2Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 3, 2010·9 cites·19 claims
1480US7816744B2Gate electrodes of HVMOS devices having non-uniform doping concentrationsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 19, 2010·7 cites·18 claims
1578US10600908B2High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2018·Granted Mar 24, 2020·2 cites·20 claims
1678US9543303B1Complementary metal oxide semiconductor device with dual-well and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2016·Granted Jan 10, 2017·3 cites·14 claims
1778US7476591B2Lateral power MOSFET with high breakdown voltage and low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 13, 2009·6 cites·20 claims
1877US7989890B2Lateral power MOSFET with high breakdown voltage and low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 2, 2011·6 cites·19 claims
1976US9634139B1Dual-well metal oxide semiconductor (MOS) device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2016·Granted Apr 25, 2017·2 cites·10 claims
2076US7928508B2Disconnected DPW structures for improving on-state performance of MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Apr 19, 2011·7 cites·20 claims
2175US10923589B2High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2019·Granted Feb 16, 2021·1 cites·8 claims
2275US9520470B1Lateral double diffused metal oxide semiconductor device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2015·Granted Dec 13, 2016·2 cites·5 claims
2375US7977743B2Alternating-doping profile for source/drain of a FETTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 12, 2011·5 cites·14 claims
2474US9257421B2Transient voltage suppression device and manufacturing method thereofHUANG TSUNG-YI·Filed 2015·Granted Feb 9, 2016·3 cites·10 claims
2573US7888216B2Method of fabricating a high performance power MOSTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 15, 2011·3 cites·20 claims
2672US8859375B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Oct 14, 2014·2 cites·5 claims
2772US8129783B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2008·Granted Mar 6, 2012·4 cites·20 claims
2872US8049295B2Coupling well structure for improving HVMOS performanceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 1, 2011·2 cites·11 claims
2971US9853100B1High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2017·Granted Dec 26, 2017·2 cites·14 claims
3069US10236375B2High voltage metal oxide semiconductor device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2018·Granted Mar 19, 2019·1 cites·6 claims
3169US8685824B2Hybrid high voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Granted Apr 1, 2014·2 cites·7 claims
3268US9287394B2Lateral double diffused metal oxide semiconductor device and manufacturing method thereofHUANG TSUNG-YI·Filed 2014·Granted Mar 15, 2016·2 cites·1 claims
3367US8158475B2Gate electrodes of HVMOS devices having non-uniform doping concentrationsSU RU-YI·Filed 2010·Granted Apr 17, 2012·2 cites·17 claims
3466US9343538B2High voltage device with additional isolation region under gate and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted May 17, 2016·2 cites·6 claims
3566US8643136B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Feb 4, 2014·2 cites·5 claims
3666US8525258B2Method for controlling impurity density distribution in semiconductor device and semiconductor device made therebyHUANG TSUNG-YI·Filed 2010·Granted Sep 3, 2013·2 cites·4 claims
3765US8183626B2High-voltage MOS devices having gates extending into recesses of substratesCHU CHEN-LIANG·Filed 2011·Granted May 22, 2012·2 cites·20 claims
3865US7723785B2High performance power MOS structureTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 25, 2010·2 cites·18 claims
3964US8178930B2Structure to improve MOS transistor on-breakdown voltageWANG SHEN-PING·Filed 2007·Granted May 15, 2012·5 cites·21 claims
4062US8963237B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Feb 24, 2015·1 cites·7 claims
4162US8114725B1Method of manufacturing MOS device having lightly doped drain structureHUANG TSUNG-YI·Filed 2010·Granted Feb 14, 2012·1 cites·9 claims
4261US8377787B2Alternating-doping profile for source/drain of a FETTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 19, 2013·1 cites·19 claims
4361US2021135005A1High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2021·Application pending·0 cites
4460US8421150B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Apr 16, 2013·1 cites·4 claims
4559US2025194133A1Semiconductor structure having low on-resistance and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4658US10326016B2High-side power device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2018·Granted Jun 18, 2019·0 cites·5 claims
4758US10236376B2High-side power device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2018·Granted Mar 19, 2019·0 cites·5 claims
4858US2022165880A1High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
4956US10497806B2Metal oxide semiconductor device having recess and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2018·Granted Dec 3, 2019·0 cites·9 claims
5056US9105757B2Junction barrier Schottky diode and manufacturing method thereofHUANG CHIH-FANG·Filed 2013·Granted Aug 11, 2015·1 cites·4 claims

Showing the top 50 of 146 patent records by PatentIndex Score.

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