Inventor · disambiguated record
Tsungyu Hung
Also filed as: HUNG TSUNGYU
10 granted patents·7 pending applications·9 citations·filing 2019–2025
82Inventor score
Top patents by PatentIndex Score
17 records- 0198US11626494B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·6 cites·20 claims
- 0295US12230692B2Self-aligned inner spacer on gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·2 cites·20 claims
- 0386US12148807B2Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 19, 2024·1 cites·20 claims
- 0481US12080766B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 0579US2024363704A1Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0677US2025194203A1Self-aligned inner spacer on gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0776US2025331283A1Dual silicide layers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0874US2024387675A1Epitaxial structure for source/drain contactTAIWAN SEMICONDUCTOR MANUFACTURNING COMPANY LTD·Filed 2024·Application pending·0 cites
- 0973US2024371952A1Backside contact structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1072US11749742B2Self-aligned inner spacer on gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 1170US12477778B2Epitaxial structure for source/drain contact for semiconductor structure having fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 18, 2025·0 cites·20 claims
- 1269US12501687B2Dual silicide layers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 1364US10930755B2Self-aligned inner spacer on gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·0 cites·20 claims
- 1457US2023386925A1Semiconductor Device With Isolation StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1555US11830773B2Semiconductor device with isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 28, 2023·0 cites·20 claims
- 1655US2025254940A1Semiconductor structure with blocking features formed within base epitaxy layers and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1751US10879131B2Semiconductor structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →