Inventor · disambiguated record
Tsung-Sheng Kang
Also filed as: KANG TSUNG-SHENG
29 granted patents·77 pending applications·10 citations·filing 2020–2024
92Inventor score
Files withIBM106
Top patents by PatentIndex Score
106 records- 0198US11227922B2Sloped epitaxy buried contactIBM·Filed 2020·Granted Jan 18, 2022·6 cites·21 claims
- 0289US11271107B2Reduction of bottom epitaxy parasitics for vertical transport field effect transistorsIBM·Filed 2020·Granted Mar 8, 2022·2 cites·13 claims
- 0389US11251182B2Staggered stacked vertical crystalline semiconducting channelsIBM·Filed 2020·Granted Feb 15, 2022·2 cites·25 claims
- 0475US11956939B2Static random access memory using vertical transport field effect transistorsIBM·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 0574US11557675B2Reduction of bottom epitaxy parasitics for vertical transport field effect transistorsIBM·Filed 2022·Granted Jan 17, 2023·0 cites·20 claims
- 0671US12310102B2Stacked vertical transport field-effect transistor logic gate structures with shared epitaxial layersIBM·Filed 2023·Granted May 20, 2025·0 cites·19 claims
- 0770US11251288B2Nanosheet transistor with asymmetric gate stackIBM·Filed 2020·Granted Feb 15, 2022·0 cites·25 claims
- 0869US12451412B2Backside gate via structure using self-aligned schemeIBM·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 0969US11652156B2Nanosheet transistor with asymmetric gate stackIBM·Filed 2021·Granted May 16, 2023·0 cites·14 claims
- 1068US12506049B2Transistors with backside source/drain contact and spacerIBM·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 1168US12482750B2Power distribution network with backside power railIBM·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 1267US11678475B2Static random access memory using vertical transport field effect transistorsIBM·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 1366US11756961B2Staggered stacked vertical crystalline semiconducting channelsIBM·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 1465US12324237B2Diffusion-break region in stacked-FET integrated circuit deviceIBM·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 1564US12457780B2Semiconductor device with void under source/drain region for backside contactIBM·Filed 2022·Granted Oct 28, 2025·0 cites·6 claims
- 1663US12484297B2Forksheet transistor with dual depth late cell boundary cutIBM·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 1763US12446306B2Stacked field effect transistor structure with independent gate control between top and bottom gatesIBM·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 1863US12080640B2Self-aligned via to metal line for interconnectIBM·Filed 2021·Granted Sep 3, 2024·0 cites·19 claims
- 1962US12262552B2Source/drain epitaxy process in stacked FETIBM·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 2062US11810918B2Stacked vertical transport field-effect transistor logic gate structures with shared epitaxial layersIBM·Filed 2020·Granted Nov 7, 2023·0 cites·20 claims
- 2162US2025318267A1Backside to frontside connection among different metal tracksIBM·Filed 2024·Application pending·0 cites
- 2262US2025359310A1Gate extension for backside clock wiringIBM·Filed 2024·Application pending·0 cites
- 2362US2025324654A1Vertical field-effect transistor with backside gate contactIBM·Filed 2024·Application pending·0 cites
- 2461US2025311299A1Isolating backside contactsIBM·Filed 2024·Application pending·0 cites
- 2561US2025294844A1Wrap around metal contactIBM·Filed 2024·Application pending·0 cites
- 2661US2025380452A1Shaped epitaxyIBM·Filed 2024·Application pending·0 cites
- 2761US2025287694A1Backside isolation pillar removal for capacitance reductionIBM·Filed 2024·Application pending·0 cites
- 2861US2025273571A1Backside contact formation for a semiconductor device structure with a dense gate pitchIBM·Filed 2024·Application pending·0 cites
- 2961US2025254945A1Different depth backside s/d contact placeholder structuresIBM·Filed 2024·Application pending·0 cites
- 3061US2025386559A1Dielectric liner protection to prevent shorting to gateIBM·Filed 2024·Application pending·0 cites
- 3161US2025287660A1Backside merged source/drain contactIBM·Filed 2024·Application pending·0 cites
- 3260US2025227997A1Backside diffusion breakIBM·Filed 2024·Application pending·0 cites
- 3360US2025201712A1Etch stop layer for backside power delivery networkIBM·Filed 2023·Application pending·0 cites
- 3460US2025157891A1Buried metal liner in source/drain epitaxial materialIBM·Filed 2023·Application pending·0 cites
- 3560US2025374618A1Forksheet structure with flexible cell height and flexible channel configurationIBM·Filed 2024·Application pending·0 cites
- 3660US2025185292A1Extra gate device integration with semiconductor deviceIBM·Filed 2023·Application pending·0 cites
- 3760US2025386598A1STACKED FETs WITH FLEXIBLE SINGLE DIFFUSION BREAKSIBM·Filed 2024·Application pending·0 cites
- 3860US2025241059A1Stacked fet structure with improved cell heightIBM·Filed 2024·Application pending·0 cites
- 3960US2025386594A1Increased contact area for self-aligned gate isolationIBM·Filed 2024·Application pending·0 cites
- 4060US2025194213A1Backside placeholder dielectric fillIBM·Filed 2023·Application pending·0 cites
- 4160US2025318277A1Backside contacts to control the voltage of the substrateIBM·Filed 2024·Application pending·0 cites
- 4260US2025194168A1Airgap in single diffusion breakIBM·Filed 2023·Application pending·0 cites
- 4360US2025169177A1Backside contact with straight profileIBM·Filed 2023·Application pending·0 cites
- 4460US2025185356A1Self-aligned backside gate cut dielectric with air gapIBM·Filed 2023·Application pending·0 cites
- 4560US2025393244A1Forming contact in tight tip-to-tip spaceIBM·Filed 2024·Application pending·0 cites
- 4660US2025204001A1Self-aligned backside diffusion break and s/d contactIBM·Filed 2023·Application pending·0 cites
- 4759US11942424B2Via patterning for integrated circuitsIBM·Filed 2021·Granted Mar 26, 2024·0 cites·10 claims
- 4859US11849647B2Nonmetallic liner around a magnetic tunnel junctionIBM·Filed 2021·Granted Dec 19, 2023·0 cites·19 claims
- 4959US2025254918A1Stacked field effect transistors with cladding silicon germanium pfet channelIBM·Filed 2024·Application pending·0 cites
- 5059US2025133827A1Contact placeholder formation for different device typesIBM·Filed 2023·Application pending·0 cites
Showing the top 50 of 106 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →