Inventor · disambiguated record
Tsunenobu Kimoto
Also filed as: KIMOTO TSUNENOBU
24 granted patents·10 pending applications·730 citations·filing 1990–2025
95Inventor score
Top patents by PatentIndex Score
34 records- 0197US6734461B1SiC wafer, SiC semiconductor device, and production method of SiC waferSIXON INC·Filed 2000·Granted May 11, 2004·479 cites·13 claims
- 0294US7241694B2Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrateDENSO CORP·Filed 2005·Granted Jul 10, 2007·35 cites·28 claims
- 0388US6853006B2Silicon carbide semiconductor deviceDENSO CORP·Filed 2003·Granted Feb 8, 2005·41 cites·10 claims
- 0486US5117267ASemiconductor heterojunction structureSUMITOMO ELECTRIC INDUSTRIES·Filed 1990·Granted May 26, 1992·56 cites·9 claims
- 0582US6660084B1Sic single crystal and method for growing the sameSIXON INC·Filed 2000·Granted Dec 9, 2003·20 cites·7 claims
- 0679US2024258380A1Semiconductor device with carbon-density-decreasing regionROHM CO LTD·Filed 2024·Application pending·0 cites
- 0778US6870189B1Pinch-off type vertical junction field effect transistor and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Mar 22, 2005·25 cites·19 claims
- 0876US11996449B2Semiconductor device with carbon-density-decreasing regionROHM CO LTD·Filed 2022·Granted May 28, 2024·0 cites·18 claims
- 0976US8696814B2Film deposition apparatus and film deposition methodMORISAKI EISUKE·Filed 2007·Granted Apr 15, 2014·6 cites·12 claims
- 1074US2025351502A1Sic semiconductor device manufacturing method and sic semiconductor deviceUNIV KYOTO·Filed 2025·Application pending·0 cites
- 1171US5250149AMethod of growing thin filmSUMITOMO ELECTRIC INDUSTRIES·Filed 1991·Granted Oct 5, 1993·31 cites·10 claims
- 1270US7528426B2Lateral junction field-effect transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 5, 2009·4 cites·10 claims
- 1367US9508802B2Gettering process for producing semiconductor deviceDANNO KATSUNORI·Filed 2012·Granted Nov 29, 2016·2 cites·6 claims
- 1464US12396230B2SiC semiconductor device manufacturing method and SiC semiconductor deviceUNIV KYOTO·Filed 2021·Granted Aug 19, 2025·0 cites·10 claims
- 1563US2025280557A1Mos transistor and method of manufacturing the sameDENSO CORP·Filed 2024·Application pending·0 cites
- 1663US2025107188A1SiC JUNCTION FIELD EFFECT TRANSISTOR AND SiC COMPLEMENTARY JUNCTION FIELD EFFECT TRANSISTORUNIV KYOTO·Filed 2024·Application pending·0 cites
- 1762US11502172B2Semiconductor device with carbon-density-decreasing regionROHM CO LTD·Filed 2019·Granted Nov 15, 2022·0 cites·19 claims
- 1861US7671388B2Lateral junction field effect transistor and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Mar 2, 2010·1 cites·7 claims
- 1960US7671387B2Lateral junction field effect transistor and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Mar 2, 2010·1 cites·8 claims
- 2060US7023033B2Lateral junction field-effect transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Apr 4, 2006·8 cites·6 claims
- 2159US5476812ASemiconductor heterojunction structureSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Dec 19, 1995·16 cites·1 claims
- 2256USRE43840ESilicon carbide semiconductor deviceKATAOKA MITSUHIRO·Filed 2010·Granted Dec 4, 2012·1 cites·10 claims
- 2354US2025351409A1Manufacturing method of metal oxide semiconductor transistorDENSO CORP·Filed 2025·Application pending·0 cites
- 2451US11725301B2Method for manufacturing crystal for synthetic gemBRILLAR CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·2 claims
- 2551US2009261362A14h-polytype gallium nitride-based semiconductor device on a 4h-polytype substratePANASONIC CORP·Filed 2009·Application pending·0 cites
- 2649US8399888B2P-type SiC semiconductorSAITOH HIROAKI·Filed 2009·Granted Mar 19, 2013·0 cites·4 claims
- 2749US7420232B2Lateral junction field effect transistor and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Sep 2, 2008·0 cites·4 claims
- 2848US2007221119A1Method of Sic Single Crystal Growth and Sic Single CrystalSIXON LTD·Filed 2005·Application pending·0 cites
- 2947US7049644B2Lateral junction field effect transistor and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted May 23, 2006·2 cites·4 claims
- 3045US2010072485A1Semiconductor device and semiconductor manufacturing methodUNIV KYOTO·Filed 2008·Application pending·0 cites
- 3144US7321142B2Field effect transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Jan 22, 2008·2 cites·4 claims
- 3242US9190482B2Method of production of SiC semiconductor deviceDANNO KATSUNORI·Filed 2012·Granted Nov 17, 2015·0 cites·3 claims
- 3341US2009072243A1Compound semiconductor device and method for fabricating compound semiconductorUNIV KYOTO·Filed 2006·Application pending·0 cites
- 3437US2005218414A14H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrateUEDA TETSUZO·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →