Inventor · disambiguated record
Tsz-Mei Kwok
Also filed as: KWOK TSZ-MEI
91 granted patents·13 pending applications·1,159 citations·filing 2009–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD77TAIWAN SEMICONDUCTOR MFG16SU CHIEN CHANG3KWOK TSZ-MEI2CHEN KUAN-YU1
Top patents by PatentIndex Score
104 records- 0199US8652894B2Method for fabricating a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 18, 2014·394 cites·20 claims
- 0299US8362575B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·242 cites·18 claims
- 0397US11916071B2Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 0497US9768178B2Semiconductor device, static random access memory cell and manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·11 cites·20 claims
- 0597US8264021B2Finfets and methods for forming the sameLAI LI-SHYUE·Filed 2010·Granted Sep 11, 2012·79 cites·15 claims
- 0697US8263451B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2010·Granted Sep 11, 2012·83 cites·20 claims
- 0796US11948971B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·3 cites·20 claims
- 0896US9142643B2Method for forming epitaxial featureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 22, 2015·25 cites·20 claims
- 0996US8310013B2Method of fabricating a FinFET deviceLIN HSIEN-HSIN·Filed 2010·Granted Nov 13, 2012·79 cites·19 claims
- 1095US9825036B2Structure and method for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·9 cites·20 claims
- 1195US8975144B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 10, 2015·18 cites·20 claims
- 1294US9287398B2Transistor strain-inducing schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 15, 2016·12 cites·20 claims
- 1394US8278196B2High surface dopant concentration semiconductor device and method of fabricatingHUANG YU-LIEN·Filed 2010·Granted Oct 2, 2012·25 cites·14 claims
- 1493US10510753B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1593US9515187B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·9 cites·20 claims
- 1692US11101347B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·6 cites·20 claims
- 1792US9691898B2Germanium profile for channel strainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 27, 2017·9 cites·20 claims
- 1892US8853039B2Defect reduction for formation of epitaxial layer in source and drain regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 7, 2014·11 cites·20 claims
- 1992US8796788B2Semiconductor devices with strained source/drain structuresKWOK TSZ-MEI·Filed 2011·Granted Aug 5, 2014·14 cites·7 claims
- 2091US10734520B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
- 2191US10164096B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·5 cites·20 claims
- 2291US9601619B2MOS devices with non-uniform P-type impurity profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 21, 2017·8 cites·20 claims
- 2390US8674453B2Mechanisms for forming stressor regions in a semiconductor deviceTSAI CHUN HSIUNG·Filed 2011·Granted Mar 18, 2014·12 cites·20 claims
- 2490US2025338609A1Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2589US11037826B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 15, 2021·2 cites·20 claims
- 2689US9666691B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2012·Granted May 30, 2017·9 cites·17 claims
- 2789US9601574B2V-shaped epitaxially formed semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·7 cites·20 claims
- 2889US2024397692A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2988US12426358B2Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 3088US10084089B2Source and drain stressors with recessed top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·3 cites·20 claims
- 3188US9583483B2Source and drain stressors with recessed top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 28, 2017·5 cites·18 claims
- 3288US9337337B2MOS device having source and drain regions with embedded germanium-containing diffusion barrierTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·7 cites·19 claims
- 3388US9209175B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 3487US10546784B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·3 cites·20 claims
- 3587US2024297252A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3686US11489074B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·1 cites·20 claims
- 3786US10749029B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·2 cites·20 claims
- 3886US10062781B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·2 cites·20 claims
- 3984US9666686B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·2 cites·20 claims
- 4084US8835982B2Method of manufacturing strained source/drain structuresKWOK TSZ-MEI·Filed 2011·Granted Sep 16, 2014·8 cites·20 claims
- 4183US12075607B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 4283US12009427B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 4383US9922975B2Integrated circuit having field-effect trasistors with dielectric fin sidewall structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 20, 2018·2 cites·20 claims
- 4483US8815713B2Reducing pattern loading effect in epitaxyTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 26, 2014·5 cites·18 claims
- 4582US9117905B2Method for incorporating impurity element in EPI silicon processSU CHIEN-CHANG·Filed 2009·Granted Aug 25, 2015·7 cites·20 claims
- 4682US8487354B2Method for improving selectivity of epi processCHEN KUAN-YU·Filed 2009·Granted Jul 16, 2013·6 cites·20 claims
- 4780US2025344461A1Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4880US2023369491A1Doping profile for strained source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4979US12408362B2Method of forming devices with strained source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 5079US10727342B2Source and drain stressors with recessed top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·1 cites·20 claims
Showing the top 50 of 104 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →