Inventor · disambiguated record
Tsung-Da Lin
Also filed as: LIN TSUNG-DA
17 granted patents·24 pending applications·89 citations·filing 2006–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD31LIN TSUNG-DA8HONG MING-HWEI1TAIWAN SEMICODUCTOR MFG CO LTD1
Top patents by PatentIndex Score
41 records- 0196US12015066B2Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·3 cites·20 claims
- 0295US12040365B1Incorporating nitrogen in dipole engineering for multi-threshold voltage applications in stacked device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·4 cites·20 claims
- 0395US10468258B1Passivator for gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·15 cites·20 claims
- 0489US7658284B2Sleeve retaining assemblyLIN TSUNG-DA·Filed 2007·Granted Feb 9, 2010·32 cites·8 claims
- 0588US10964543B2Passivator for gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·4 cites·20 claims
- 0684US2025344483A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0780US2025359164A1Gate dielectric layers for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0880US2025359296A1Threshold voltage tuning using a multiple dipole loop process for cfet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0979US2025366157A1Volumeless Threshold Voltage Tuning for Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1078US12501689B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 1178US2025359129A1Tuning work functions of complementary transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1278US2025349545A1Volume-less fluorine incorporation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1377US2025344498A1Multi-vt solution for bottom and top tier deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1476US7441482B2Quick switching hand toolLIN TSUNG-DA·Filed 2007·Granted Oct 28, 2008·11 cites·5 claims
- 1576US2024347606A1Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Voltage Applications in Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1674US2024290630A1Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Voltage Applications in Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1773US2023378294A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1873US2024371643A1Semiconductor device structure with gate and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1973US2024413221A1Integrated circuit device with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2072US2024379449A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2171US2025308905A1Method forming gate stacks adopting thin silicon capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2271US2024290662A1Volumeless Threshold Voltage Tuning for Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2368US12074206B2Integrated circuit device with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 2468US2024313076A1Gate dielectric layers for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2567US11791216B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 2667US7240590B1Quick release device for ratchet toolsLIN TSUNG-DA·Filed 2006·Granted Jul 10, 2007·8 cites·7 claims
- 2767US2024071767A1Volume-less Fluorine Incorporation MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2867US2024371997A1Tuning Work Functions of Complementary TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2966US12336273B2Method for forming semiconductor structure using fluorine to treat gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 3066US12051594B2Method for forming semiconductor device structure with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 3166US2024321646A1Threshold voltage tuning using a multiple dipole loop process for cfet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3265US12362185B2Method forming gate stacks adopting thin silicon capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 3365US7484439B2Quick switching hand toolLIN TSUNG-DA·Filed 2006·Granted Feb 3, 2009·5 cites·4 claims
- 3461US7261019B1Returning assembly of spannerLIN TSUNG-DA·Filed 2006·Granted Aug 28, 2007·4 cites·8 claims
- 3561US2024413152A1Multi-vt solution for bottom and top tier deviceTAIWAN SEMICODUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3660US2025380484A1Using a dipole layer to dope a gate dielectric of a gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3757US7331257B2Returning assembly of spannerLIN TSUNG-DA·Filed 2006·Granted Feb 19, 2008·2 cites·3 claims
- 3856US2009158787A1Anti-theft display card structureLIN TSUNG-DA·Filed 2007·Application pending·0 cites
- 3955US2009023328A1Burglarproof socket exhibition assemblyLIN TSUNG-DA·Filed 2007·Application pending·0 cites
- 4053US8859441B2Method and system for manufacturing semiconductor deviceHONG MING-HWEI·Filed 2012·Granted Oct 14, 2014·1 cites·6 claims
- 4152US2023115634A1Transistor Gate Structures and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →