Inventor · disambiguated record
Tsann Lin
Also filed as: LIN TSANN · LIN TSANN-HWANG
124 granted patents·17 pending applications·2,777 citations·filing 1992–2025
99Inventor score
Top patents by PatentIndex Score
141 records- 0199US7488609B1Method for forming an MgO barrier layer in a tunneling magnetoresistive (TMR) deviceHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Feb 10, 2009·108 cites·16 claims
- 0298US6023395AMagnetic tunnel junction magnetoresistive sensor with in-stack biasingIBM·Filed 1998·Granted Feb 8, 2000·235 cites·28 claims
- 0398US5701223ASpin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensorIBM·Filed 1996·Granted Dec 23, 1997·214 cites·20 claims
- 0497US11672185B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
- 0597US11088201B2Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·9 cites·20 claims
- 0697US5508866AMagnetoresistive sensor having exchange-coupled stabilization for transverse bias layerIBM·Filed 1994·Granted Apr 16, 1996·97 cites·25 claims
- 0796US11165012B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·5 cites·20 claims
- 0895US11842757B2Crystal seed layer for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
- 0995US6411476B1Trilayer seed layer structure for spin valve sensorIBM·Filed 1999·Granted Jun 25, 2002·74 cites·22 claims
- 1095US5515221AMagnetically stable shields for MR headIBM·Filed 1994·Granted May 7, 1996·76 cites·31 claims
- 1195US5315468AMagnetoresistive sensor having antiferromagnetic layer for exchange biasIBM·Filed 1992·Granted May 24, 1994·78 cites·11 claims
- 1294US12022743B2Magnetic tunnel junction (MTJ) element and its fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·2 cites·20 claims
- 1394US11289538B2Memory device and semiconductor die, and method of fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·3 cites·20 claims
- 1494US7239489B2Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer processIBM·Filed 2004·Granted Jul 3, 2007·56 cites·20 claims
- 1594US6709767B2In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufactureHITACHI GLOBAL STORAGE TECH·Filed 2001·Granted Mar 23, 2004·42 cites·33 claims
- 1694US6262869B1Spin valve sensor with encapsulated keeper layer and method of makingIBM·Filed 1999·Granted Jul 17, 2001·97 cites·47 claims
- 1794US6185078B1Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gapIBM·Filed 1998·Granted Feb 6, 2001·94 cites·22 claims
- 1892US7830641B2Tunneling magnetoresistive (TMR) sensor with a Co-Fe-B free layer having a negative saturation magnetostrictionHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Nov 9, 2010·14 cites·13 claims
- 1992US6731477B2Current-perpendicular-to-plane spin-valve sensor with metallic oxide barrier layer and method of fabricationHITACHI GLOBAL STORAGE TECH·Filed 2001·Granted May 4, 2004·36 cites·20 claims
- 2092US5528440ASpin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the elementIBM·Filed 1994·Granted Jun 18, 1996·95 cites·9 claims
- 2191US8836000B1Bottom-type perpendicular magnetic tunnel junction (pMTJ) element with thermally stable amorphous blocking layersAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Sep 16, 2014·13 cites·10 claims
- 2291US6896975B2Spin-valve sensor with pinning layers comprising multiple antiferromagnetic filmsIBM·Filed 2002·Granted May 24, 2005·31 cites·27 claims
- 2391US6780524B2In-situ oxidized films for use as gap layers for a spin-valve sensor and methods of manufactureHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Aug 24, 2004·28 cites·25 claims
- 2491US6735058B2Current-perpendicular-to-plane read head with an amorphous magnetic bottom shield layer and an amorphous nonmagnetic bottom lead layerIBM·Filed 2002·Granted May 11, 2004·31 cites·22 claims
- 2591US5949623AMonolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive headsIBM·Filed 1997·Granted Sep 7, 1999·80 cites·32 claims
- 2691US5492720AMethod of manufacturing a magnetoresistive sensorIBM·Filed 1995·Granted Feb 20, 1996·63 cites·15 claims
- 2791US5436778AMagnetoresistive sensor having antiferromagnetic exchange biasIBM·Filed 1994·Granted Jul 25, 1995·44 cites·24 claims
- 2890US12382841B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 2990US8094421B2Current-perpendicular-to-plane (CPP) read sensor with multiple reference layersLIN TSANN·Filed 2007·Granted Jan 10, 2012·10 cites·16 claims
- 3090US7469465B2Method of providing a low-stress sensor configuration for a lithography-defined read sensorHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Dec 30, 2008·26 cites·15 claims
- 3190US6822838B2Dual magnetic tunnel junction sensor with a longitudinal bias stackIBM·Filed 2002·Granted Nov 23, 2004·35 cites·23 claims
- 3290US5621592AMagnetic head with magnetically stable shield layers and/or write polesIBM·Filed 1995·Granted Apr 15, 1997·55 cites·49 claims
- 3390US2025331429A1Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3489US12349600B2Magnetic tunnel junction (MTJ) element and its fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 3589US6141191ASpin valves with enhanced GMR and thermal stabilityIBM·Filed 1997·Granted Oct 31, 2000·53 cites·26 claims
- 3688US12035636B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 3788US8537504B2Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic buffer, shielding and seed layersLIN TSANN·Filed 2010·Granted Sep 17, 2013·9 cites·21 claims
- 3888US6747852B2Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layerIBM·Filed 2001·Granted Jun 8, 2004·38 cites·13 claims
- 3988US6223420B1Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiencyIBM·Filed 1998·Granted May 1, 2001·49 cites·21 claims
- 4087US6989971B2Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication processHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Jan 24, 2006·18 cites·4 claims
- 4187US6788499B2Spin valve sensor with insulating and conductive seed layersIBM·Filed 2003·Granted Sep 7, 2004·24 cites·3 claims
- 4287US6775111B2Trilayer seed layer structure for spin valve sensorIBM·Filed 2002·Granted Aug 10, 2004·20 cites·6 claims
- 4386US6592725B2Fabrication method for spin valve sensor with insulating and conducting seed layersIBM·Filed 2002·Granted Jul 15, 2003·22 cites·8 claims
- 4486US6030753AMonolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive headsIBM·Filed 1999·Granted Feb 29, 2000·54 cites·30 claims
- 4586US5904347ADevice for turning long membersFiled 1997·Granted May 18, 1999·40 cites·3 claims
- 4685US8675317B2Current-perpendicular-to-plane (CPP) read sensor with dual seed and cap layersLIN TSANN·Filed 2010·Granted Mar 18, 2014·7 cites·13 claims
- 4785US8169753B2Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layersLIN TSANN·Filed 2008·Granted May 1, 2012·13 cites·20 claims
- 4885US7652855B2Magnetic sensor with extended free layer and overlaid leadsHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Jan 26, 2010·6 cites·17 claims
- 4985US7606009B2Read sensor stabilized by bidirectional anisotropyHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Oct 20, 2009·6 cites·32 claims
- 5085US7506429B2Method of constructing a magnetic sensorHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Mar 24, 2009·5 cites·3 claims
Showing the top 50 of 141 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →