Inventor · disambiguated record
Tsann Linn
Also filed as: LIN TSANN · LINN TSANN
2 granted patents·302 citations·filing 1998–2002
72Inventor score
Files withIBM2
Top patents by PatentIndex Score
2 records- 0197US6841395B2Method of forming a barrier layer of a tunneling magnetoresistive sensorIBM·Filed 2002·Granted Jan 11, 2005·89 cites·14 claims
- 0296US6114719AMagnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cellIBM·Filed 1998·Granted Sep 5, 2000·213 cites·37 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →