Inventor · disambiguated record
Tsuneo Ogura
Also filed as: OGURA TSUNEO
83 granted patents·17 pending applications·1,449 citations·filing 1983–2019
99Inventor score
Top patents by PatentIndex Score
100 records- 0198US6750508B2Power semiconductor switching element provided with buried electrodeTOSHIBA KK·Filed 2001·Granted Jun 15, 2004·190 cites·11 claims
- 0296US6114727ASemiconductor deviceTOSHIBA KK·Filed 1998·Granted Sep 5, 2000·171 cites·10 claims
- 0395US6566691B1Semiconductor device with trench gate having structure to promote conductivity modulationTOSHIBA KK·Filed 2000·Granted May 20, 2003·86 cites·14 claims
- 0494US8319314B2Semiconductor deviceOGURA TSUNEO·Filed 2011·Granted Nov 27, 2012·19 cites·13 claims
- 0592US7800168B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Sep 21, 2010·17 cites·9 claims
- 0692US6153896ASemiconductor device and control method thereofTOSHIBA KK·Filed 1998·Granted Nov 28, 2000·97 cites·7 claims
- 0789US7915617B2Semiconductor deviceTOSHIBA KK·Filed 2006·Granted Mar 29, 2011·15 cites·20 claims
- 0886US9620631B2Power semiconductor deviceTOSHIBA KK·Filed 2013·Granted Apr 11, 2017·6 cites·19 claims
- 0985US9159722B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Oct 13, 2015·9 cites·20 claims
- 1085US7772641B2Power semiconductor device with a plurality of gate electrodesTOSHIBA KK·Filed 2007·Granted Aug 10, 2010·15 cites·8 claims
- 1185US7531871B2Power semiconductor switching elementTOSHIBA KK·Filed 2005·Granted May 12, 2009·8 cites·8 claims
- 1285US7456487B2Semiconductor deviceTOSHIBA KK·Filed 2004·Granted Nov 25, 2008·28 cites·6 claims
- 1384US10439054B2Insulated gate bipolar transistorTOSHIBA KK·Filed 2018·Granted Oct 8, 2019·4 cites·7 claims
- 1484US9219060B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Dec 22, 2015·7 cites·15 claims
- 1584US7268390B2Power semiconductor deviceTOSHIBA KK·Filed 2005·Granted Sep 11, 2007·9 cites·20 claims
- 1683US9634128B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 25, 2017·4 cites·11 claims
- 1783US4959703ATurn-on/off driving technique for insulated gate thyristorTOSHIBA KK·Filed 1989·Granted Sep 25, 1990·33 cites·12 claims
- 1881US9214535B2Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Dec 15, 2015·6 cites·10 claims
- 1981US7294886B2Power semiconductor deviceTOSHIBA KK·Filed 2005·Granted Nov 13, 2007·11 cites·19 claims
- 2081US6891224B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted May 10, 2005·22 cites·9 claims
- 2181US5072287ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1991·Granted Dec 10, 1991·75 cites·17 claims
- 2280US10083956B2Semiconductor deviceTOSHIBA KK·Filed 2017·Granted Sep 25, 2018·3 cites·20 claims
- 2380US9324815B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 26, 2016·3 cites·12 claims
- 2479US9391070B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Jul 12, 2016·3 cites·20 claims
- 2578US6268990B1Semiconductor protection device and power converting systemTOSHIBA KK·Filed 1999·Granted Jul 31, 2001·46 cites·23 claims
- 2676US9318588B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 19, 2016·2 cites·9 claims
- 2776US6747295B2Semiconductor device with trench gateTOSHIBA KK·Filed 2003·Granted Jun 8, 2004·19 cites·7 claims
- 2874US6534998B1Semiconductor device and control method thereofTOSHIBA KK·Filed 2000·Granted Mar 18, 2003·16 cites·4 claims
- 2974US6323717B1Semiconductor device, drive method, and drive apparatusTOSHIBA KK·Filed 1999·Granted Nov 27, 2001·46 cites·21 claims
- 3073US7067870B2Power semiconductor switching elementTOSHIBA KK·Filed 2004·Granted Jun 27, 2006·12 cites·13 claims
- 3172US7781869B2Semiconductor device having rectifying actionTOSHIBA KK·Filed 2006·Granted Aug 24, 2010·4 cites·14 claims
- 3271US5994739AIntegrated circuit deviceTOSHIBA KK·Filed 1995·Granted Nov 30, 1999·32 cites·16 claims
- 3370US10468511B2Semiconductor deviceTOSHIBA KK·Filed 2017·Granted Nov 5, 2019·1 cites·9 claims
- 3470US5144401ATurn-on/off driving technique for insulated gate thyristorTOSHIBA KK·Filed 1989·Granted Sep 1, 1992·26 cites·17 claims
- 3568US9224844B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Dec 29, 2015·2 cites·20 claims
- 3668US9054152B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Jun 9, 2015·2 cites·20 claims
- 3767US9059236B2Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Jun 16, 2015·2 cites·20 claims
- 3867US9054066B2Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Jun 9, 2015·2 cites·15 claims
- 3967US8853775B2Insulated gate bipolar transistor having control electrode disposed in trenchTOSHIBA KK·Filed 2013·Granted Oct 7, 2014·2 cites·20 claims
- 4067US7049658B2Power semiconductor deviceTOSHIBA KK·Filed 2003·Granted May 23, 2006·13 cites·27 claims
- 4166US5332920ADielectrically isolated high and low voltage substrate regionsTOSHIBA KK·Filed 1992·Granted Jul 26, 1994·32 cites·26 claims
- 4265US9496352B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Nov 15, 2016·1 cites·20 claims
- 4363US5688702AProcess of making a semiconductor device using a silicon-on-insulator substrateTOSHIBA KK·Filed 1994·Granted Nov 18, 1997·28 cites·7 claims
- 4462US5883402ASemiconductor device and protection methodTOSHIBA KK·Filed 1996·Granted Mar 16, 1999·21 cites·10 claims
- 4561US9029918B2Semiconductor deviceOGURA TSUNEO·Filed 2011·Granted May 12, 2015·1 cites·7 claims
- 4661US5159427ASemiconductor substrate structure for use in power ic deviceTOSHIBA KK·Filed 1990·Granted Oct 27, 1992·29 cites·8 claims
- 4761US4700466AMethod of manufacturing semiconductor device wherein silicon substrates are bonded togetherTOSHIBA KK·Filed 1986·Granted Oct 20, 1987·27 cites·10 claims
- 4859US8912632B2Semiconductor deviceOGURA TSUNEO·Filed 2011·Granted Dec 16, 2014·1 cites·12 claims
- 4959US5097314ADielectrically isolated substrate with isolated high and low breakdown voltage elementsTOSHIBA KK·Filed 1991·Granted Mar 17, 1992·24 cites·6 claims
- 5059US5049968ADielectrically isolated substrate and semiconductor device using the sameTOSHIBA KK·Filed 1990·Granted Sep 17, 1991·24 cites·15 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →