Inventor · disambiguated record
Tsukasa Ooishi
Also filed as: OOISHI TSUKASA
294 granted patents·23 pending applications·10,460 citations·filing 1989–2008
99Inventor score
Files withMITSUBISHI ELECTRIC CORP219RENESAS TECH CORP88MITSUBISHI ELECTRIC ENG3HITACHI ULSI SYS CO LTD1MITISUBISHI DENKI KABUSHIKI KA1
Top patents by PatentIndex Score
317 records- 0199US7208751B2Non-volatile semiconductor memory device allowing shrinking of memory cellRENESAS TECH CORP·Filed 2003·Granted Apr 24, 2007·210 cites·11 claims
- 0299US7173857B2Nonvolatile semiconductor memory device capable of uniformly inputting/outputting dataRENESAS TECH CORP·Filed 2005·Granted Feb 6, 2007·414 cites·4 claims
- 0399US4977542ADynamic semiconductor memory device of a twisted bit line system having improved reliability of readoutMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Dec 11, 1990·446 cites·21 claims
- 0498US7286394B2Non-volatile semiconductor memory device allowing concurrent data writing and data readingRENESAS TECH CORP·Filed 2005·Granted Oct 23, 2007·106 cites·2 claims
- 0598US6731535B1Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2003·Granted May 4, 2004·167 cites·8 claims
- 0698US6404258B2Delay circuit having low operating environment dependencyMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 11, 2002·94 cites·7 claims
- 0798US5689460ASemiconductor memory device with a voltage down converter stably generating an internal down-converted voltageMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 18, 1997·202 cites·56 claims
- 0897US6480946B1Memory system for synchronized and high speed data transferMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 12, 2002·181 cites·20 claims
- 0997US6438064B2Semiconductor memory device capable of efficient memory cell select operation with reduced element countMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 20, 2002·131 cites·17 claims
- 1097US6424585B1Semiconductor memory device with a voltage down converter stably generating an internal down-converted voltageMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 23, 2002·121 cites·57 claims
- 1196US6807101B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2002·Granted Oct 19, 2004·121 cites·20 claims
- 1296US6636110B1Internal clock generating circuit for clock synchronous semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 21, 2003·248 cites·27 claims
- 1396US6438066B1Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a systemMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 20, 2002·93 cites·6 claims
- 1496US6421286B1Semiconductor integrated circuit device capable of self-analyzing redundancy replacement adapting to capacities of plural memory circuits integrated thereinMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 16, 2002·116 cites·16 claims
- 1596US6166990AClock reproduction circuit that can reproduce internal clock signal correctly in synchronization with external clock signalMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 26, 2000·283 cites·37 claims
- 1695US6999342B2Semiconductor device saving data in non-volatile manner during standbyRENESAS TECH CORP·Filed 2005·Granted Feb 14, 2006·40 cites·3 claims
- 1795US6618319B2Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a systemMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 9, 2003·79 cites·4 claims
- 1895US6597617B2Semiconductor device with reduced current consumption in standby stateMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jul 22, 2003·83 cites·3 claims
- 1995US6433586B2Semiconductor logic circuit device of low current consumptionMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 13, 2002·90 cites·23 claims
- 2095US6125078ASynchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a systemMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Sep 26, 2000·116 cites·9 claims
- 2194US6414894B2Semiconductor device with reduced current consumption in standby stateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 2, 2002·66 cites·16 claims
- 2294US6337832B1Operable synchronous semiconductor memory device switching between single data rate mode and double data rate modeMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 8, 2002·98 cites·24 claims
- 2393US7394685B2Nonvolatile memory device with write error suppressed in reading dataRENESAS TECH CORP·Filed 2006·Granted Jul 1, 2008·29 cites·10 claims
- 2493US6873561B2Semiconductor memory device operating with low current consumptionRENESAS TECH CORP·Filed 2003·Granted Mar 29, 2005·81 cites·19 claims
- 2593US6449182B1Low-power semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 10, 2002·70 cites·13 claims
- 2693US6292015B1Semiconductor integrated circuit device including logic gate that attains reduction of power consumption and high-speed operationMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Sep 18, 2001·84 cites·19 claims
- 2793US6246614B1Clock synchronous semiconductor memory device having a reduced access timeMITSUBISHIKI DENKI KABUSHIKI K·Filed 1999·Granted Jun 12, 2001·105 cites·20 claims
- 2893US5751651ASemiconductor integrated circuit device having a hierarchical power source configurationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 12, 1998·72 cites·9 claims
- 2993US5687123ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 11, 1997·66 cites·42 claims
- 3092US7286416B2Non-volatile semiconductor memory device and semiconductor memory deviceHITACHI ULSI SYS CO LTD·Filed 2005·Granted Oct 23, 2007·31 cites·5 claims
- 3192US7233537B2Thin film magnetic memory device provided with a dummy cell for data read referenceMITSUBISHI ELECTRIC ENG·Filed 2002·Granted Jun 19, 2007·69 cites·25 claims
- 3292US6717881B2Semiconductor memory device having potential control circuitRENESAS TECH CORP·Filed 2002·Granted Apr 6, 2004·53 cites·7 claims
- 3392US6058061ASemiconductor circuit device with reduced power consumption in slow operation mode.MITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 2, 2000·76 cites·32 claims
- 3492US5783956ASemiconductor device realizing internal operation factor corresponding to an external operational factor stably regardless of fluctuation of the external operational factorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 21, 1998·81 cites·31 claims
- 3591US6522599B2Operable synchronous semiconductor memory device switching between single data rate mode and double data rate modeMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 18, 2003·49 cites·7 claims
- 3691US6396768B2Synchronous semiconductor memory device allowing easy and fast testMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 28, 2002·44 cites·4 claims
- 3791US6072742ASemiconductor memory device with a voltage down converter stably generating an internal down-converted voltageMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 6, 2000·59 cites·20 claims
- 3891US5936443APower-on reset signal generator for semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 10, 1999·73 cites·12 claims
- 3991US5886946ASemiconductor memory device allowing reduction in power consumption during standbyMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 23, 1999·70 cites·24 claims
- 4091US5881014ASemiconductor memory device with a voltage down converter stably generating an internal down-converter voltageMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 9, 1999·64 cites·16 claims
- 4191US5835436ADynamic type semiconductor memory device capable of transferring data between array blocks at high speedMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 10, 1998·64 cites·39 claims
- 4291US5717652ASemiconductor memory device capable of high speed plural parallel test, method of data writing therefor and parallel testerMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 10, 1998·61 cites·22 claims
- 4391US5249155ASemiconductor device incorporating internal voltage down converting circuitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 28, 1993·81 cites·35 claims
- 4490US6842366B2Thin film magnetic memory device executing self-reference type data readRENESAS TECH CORP·Filed 2003·Granted Jan 11, 2005·55 cites·16 claims
- 4590US6724686B2Operable synchronous semiconductor memory device switching between single data rate mode and double data rate modeRENESAS TECH CORP·Filed 2003·Granted Apr 20, 2004·41 cites·3 claims
- 4690US6424582B1Semiconductor memory device having redundancyMITSUBISHI DENKI KASBUSHIKI KA·Filed 1999·Granted Jul 23, 2002·84 cites·18 claims
- 4790US6400632B1Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fallMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·56 cites·16 claims
- 4890US6373315B2Signal potential conversion circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 16, 2002·42 cites·15 claims
- 4990US6314042B1Fast accessible semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 6, 2001·73 cites·14 claims
- 5090US6271710B1Temperature dependent circuit, and current generating circuit, inverter and oscillation circuit using the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 7, 2001·42 cites·11 claims
Showing the top 50 of 317 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →