Inventor · disambiguated record

Tsung-Han Shen

Also filed as: SHEN TSUNG-HAN

3 granted patents·7 pending applications·2 citations·filing 2021–2025

55Inventor score

Technology areasH10D H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD10

Top patents by PatentIndex Score

10 records

0191US11610982B2Void elimination for gap-filling in high-aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·2 cites·20 claims
0278US12100751B2Void elimination for gap-filling in high-aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
0378US2025351541A1Semiconductor gate structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0477US2024371981A1Void elimination for gap-filling in high-aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0577US2025338567A1Lowering pmosfet threshold voltage through ternary-element nitrideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0677US2025343043A1Metal gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0771US2025338599A1Semiconductor gate structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0871US2025318206A1Lowering pmosfet threshold voltage through ternary-element nitrideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0969US12431356B2Metal gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
1060US2025372365A1Methods of widening threshold voltage tuning range for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →