Inventor · disambiguated record
Tsun Chung Tu
Also filed as: TU TSUN CHUNG
9 granted patents·49 citations·filing 2016–2023
86Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD9
Top patents by PatentIndex Score
9 records- 0195US10790439B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·14 cites·20 claims
- 0295US9780301B1Method for manufacturing mixed-dimension and void-free MRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·18 cites·20 claims
- 0394US11889769B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0492US11075335B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·7 cites·20 claims
- 0590US11469372B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
- 0689US10109790B2Method for manufacturing mixed-dimension and void-free MRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·6 cites·20 claims
- 0777US12274183B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 0870US12426514B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 0968US11489107B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →