Inventor · disambiguated record
Tsutomu Uesugi
Also filed as: UESUGI TSUTOMU
22 granted patents·5 pending applications·632 citations·filing 1996–2019
96Inventor score
Files withSUGIMOTO MASAHIRO7TOYODA CHUO KENKYUSHO KK6TOYOTA MOTOR CO LTD5DENSO CORP4TOYOTA CHUO KENKYUSHO KK4
Top patents by PatentIndex Score
27 records- 0197US7777252B2III-V hemt devicesTOYOTA MOTOR CO LTD·Filed 2005·Granted Aug 17, 2010·78 cites·4 claims
- 0296US9818856B2Semiconductor device with high electron mobility transistorDENSO CORP·Filed 2012·Granted Nov 14, 2017·33 cites·18 claims
- 0395US6982459B2Semiconductor device having a vertical type semiconductor elementDENSO CORP·Filed 2003·Granted Jan 3, 2006·96 cites·12 claims
- 0492US6700175B1Vertical semiconductor device having alternating conductivity semiconductor regionsTOYODA CHUO KENKYUSHO KK·Filed 2000·Granted Mar 2, 2004·87 cites·28 claims
- 0590US6639260B2Semiconductor device having a vertical semiconductor elementDENSO CORP·Filed 2001·Granted Oct 28, 2003·49 cites·24 claims
- 0688US7211839B2Group III nitride semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2004·Granted May 1, 2007·49 cites·22 claims
- 0788US6072215ASemiconductor device including lateral MOS elementTOYODA CHUO KENKYUSHO KK·Filed 1999·Granted Jun 6, 2000·83 cites·16 claims
- 0885US6177704B1Semiconductor device containing a lateral MOS transistorTOYODA CHUO KENKYUSHO KK·Filed 1998·Granted Jan 23, 2001·65 cites·10 claims
- 0975US8188514B2TransistorSUGIMOTO MASAHIRO·Filed 2009·Granted May 29, 2012·6 cites·4 claims
- 1074US8008749B2Semiconductor device having vertical electrodes structureTOYOTA MOTOR CO LTD·Filed 2005·Granted Aug 30, 2011·6 cites·23 claims
- 1172US9735260B2III-V HEMT devicesTOYOTA MOTOR CO LTD·Filed 2014·Granted Aug 15, 2017·2 cites·4 claims
- 1271US8222675B2Nitride semiconductor device including gate insulating portion containing AINSUGIMOTO MASAHIRO·Filed 2009·Granted Jul 17, 2012·5 cites·12 claims
- 1369US5708286AInsulated gate semiconductor device and fabrication method thereforTOYODA CHUO KENKYUSHO KK·Filed 1996·Granted Jan 13, 1998·32 cites·11 claims
- 1467US10381469B2Semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2014·Granted Aug 13, 2019·2 cites·12 claims
- 1566US8110870B2Semiconductor deviceSUGIMOTO MASAHIRO·Filed 2009·Granted Feb 7, 2012·3 cites·13 claims
- 1661US7800130B2Semiconductor devicesTOYOTA MOTOR CO LTD·Filed 2006·Granted Sep 21, 2010·2 cites·6 claims
- 1757US6060731AInsulated-gate semiconductor device having a contact region in electrical contact with a body region and a source regionTOYODA CHUO KENKYUSHO KK·Filed 1998·Granted May 9, 2000·17 cites·11 claims
- 1855US6169299B1Semiconductor deviceTOYODA CHUO KENKYUSHO KK·Filed 1999·Granted Jan 2, 2001·16 cites·20 claims
- 1949US8299498B2Semiconductor device having hetero junctionUESUGI TSUTOMU·Filed 2008·Granted Oct 30, 2012·1 cites·18 claims
- 2048US9184271B2III-V HEMT devicesSUGIMOTO MASAHIRO·Filed 2010·Granted Nov 10, 2015·0 cites·6 claims
- 2145US10763355B2Power semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2019·Granted Sep 1, 2020·0 cites·3 claims
- 2241US2011316049A1Nitride semiconductor device and method of manufacturing the sameSUGIMOTO MASAHIRO·Filed 2009·Application pending·0 cites
- 2339US2008142845A1HEMT including MIS structureTOYOTA MOTOR CO LTD·Filed 2007·Application pending·0 cites
- 2439US2008090395A1Method for producing p-type group III nitride semiconductor and method for producing electrode for p-type group III nitride semiconductorSUGIMOTO MASAHIRO·Filed 2007·Application pending·0 cites
- 2539US2009134456A1Semiconductor devices and method of manufacturing themSUGIMOTO MASAHIRO·Filed 2006·Application pending·0 cites
- 2636US9337267B2Semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2015·Granted May 10, 2016·0 cites·3 claims
- 2733US2017263864A1Electronic deviceTOYOTA CHUO KENKYUSHO KK·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →