Inventor · disambiguated record
Tsung-Hsueh Yang
Also filed as: YANG TSUNG-HSUEH
22 granted patents·15 pending applications·59 citations·filing 2013–2025
92Inventor score
Top patents by PatentIndex Score
37 records- 0196US11818962B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 0295US9536969B2Self-aligned split gate flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 3, 2017·22 cites·20 claims
- 0394US10276779B2Top electrode cap structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·9 cites·20 claims
- 0493US9711508B2Capacitor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·9 cites·19 claims
- 0590US9391151B2Split gate memory device for improved erase speedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 12, 2016·11 cites·19 claims
- 0688US11121308B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·3 cites·20 claims
- 0786US2025107451A1Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0885US12274182B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 0982US12207562B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 1082US2025234791A1Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1180US10164181B2Sidewall protection of memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·3 cites·20 claims
- 1277US2025359072A1Phase-change device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1376US2025351747A1Phase change material in an electronic switch having a flat profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1475US2024381792A1In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1575US2025338781A1Phase change material (pcm) radio frequency (rf) switch with pcm recess and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1674US2025318448A1Encapsulated phase change material switch and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1774US2025107457A1Phase change material (pcm) radio frequency (rf) switch with pcm recess and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1874US2025318447A1Thermal barrier structure in phase change material deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1973US12302764B2In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2071US11672180B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 2171US2024057346A1Phase-change device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2271US2024341205A1Phase Change Material In An Electronic Switch Having A Flat ProfileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2370US10727399B2Top electrode cap structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·0 cites·20 claims
- 2469US12369503B2Encapsulated phase change material switch and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 2569US12310261B2Memory device having via landing protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 2669US2024130252A1Thermal barrier structure in phase change material deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2763US10505103B2Top electrode cap structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 10, 2019·0 cites·20 claims
- 2857US9570457B2Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·0 cites·20 claims
- 2957US2025248319A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3055US11289651B2Memory device having via landing protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 29, 2022·0 cites·20 claims
- 3155US9673204B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 6, 2017·0 cites·20 claims
- 3253US10872895B2Method of manufacturing capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 22, 2020·0 cites·20 claims
- 3353US2024237560A1Phase-change memory device with tapered thermal transfer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3453US2025386737A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3552US10276584B2Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·0 cites·20 claims
- 3650US9799665B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 24, 2017·0 cites·20 claims
- 3745US8853768B1Method of fabricating MONOS semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 7, 2014·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →