Inventor · disambiguated record
Tsutomu Yatsuo
Also filed as: SHIMIZU YOSHITERU · YATSUO TSUTOMU
41 granted patents·3 pending applications·555 citations·filing 1974–2016
98Inventor score
Files withHITACHI LTD32NAT INST OF ADVANCED IND SCIEN4HARADA SHINSUKE1NAGANO TAKAHIRO1NAT INST ADVANCED IND SCIENCE & TECH1
Top patents by PatentIndex Score
44 records- 0188US9806520B2Inrush current limiting circuitYAZAKI CORP·Filed 2016·Granted Oct 31, 2017·7 cites·5 claims
- 0286US5736753ASemiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbideHITACHI LTD·Filed 1995·Granted Apr 7, 1998·71 cites·14 claims
- 0386US4100562ALight coupled semiconductor device and method of manufacturing the sameHITACHI LTD·Filed 1976·Granted Jul 11, 1978·51 cites·17 claims
- 0482US8003991B2Silicon carbide MOS field effect transistor with built-in Schottky diode and method for fabrication thereofNAT INST OF ADVANCED IND SCIEN·Filed 2006·Granted Aug 23, 2011·10 cites·11 claims
- 0580US7728336B2Silicon carbide semiconductor device and method for producing the sameNAT INST OF ADVANCED IND SCIEN·Filed 2007·Granted Jun 1, 2010·7 cites·17 claims
- 0679US7811874B2Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor deviceNAT INST OF ADVANCED IND SCIEN·Filed 2007·Granted Oct 12, 2010·6 cites·5 claims
- 0778US6353236B1Semiconductor surge absorber, electrical-electronic apparatus, and power module using the sameHITACHI LTD·Filed 1999·Granted Mar 5, 2002·52 cites·21 claims
- 0877US7880173B2Semiconductor device and method of manufacturing sameNAT INST OF ADVANCED IND SCIEN·Filed 2008·Granted Feb 1, 2011·7 cites·8 claims
- 0971US3947864ADiode-integrated thyristorHITACHI LTD·Filed 1974·Granted Mar 30, 1976·19 cites·18 claims
- 1070US6169672B1Power converter with clamping circuitHITACHI LTD·Filed 1996·Granted Jan 2, 2001·40 cites·18 claims
- 1169US6566726B1Semiconductor device and power converter using the sameHITACHI LTD·Filed 2000·Granted May 20, 2003·18 cites·10 claims
- 1269US3978514ADiode-integrated high speed thyristorHITACHI LTD·Filed 1974·Granted Aug 31, 1976·16 cites·8 claims
- 1367US4388635AHigh breakdown voltage semiconductor deviceHITACHI LTD·Filed 1980·Granted Jun 14, 1983·19 cites·21 claims
- 1466US4016593ABidirectional photothyristor deviceHITACHI LTD·Filed 1975·Granted Apr 5, 1977·28 cites·15 claims
- 1560US4691223ASemiconductor device having high breakdown voltageHITACHI LTD·Filed 1985·Granted Sep 1, 1987·19 cites·27 claims
- 1660US4443810AGate turn-off amplified thyristor with non-shorted auxiliary anodeHITACHI LTD·Filed 1981·Granted Apr 17, 1984·15 cites·10 claims
- 1756US5021855AGate turn-off thyristorHITACHI LTD·Filed 1989·Granted Jun 4, 1991·22 cites·20 claims
- 1855US3967308ASemiconductor controlled rectifierHITACHI LTD·Filed 1974·Granted Jun 29, 1976·9 cites·8 claims
- 1953US9490338B2Silicon carbide semiconductor apparatus and method of manufacturing sameNAT INST ADVANCED IND SCIENCE & TECH·Filed 2013·Granted Nov 8, 2016·0 cites·3 claims
- 2053US4542398ASemiconductor devices of multi-emitter typeHITACHI LTD·Filed 1984·Granted Sep 17, 1985·16 cites·15 claims
- 2152US4626888AGate turn-off thyristorHITACHI LTD·Filed 1983·Granted Dec 2, 1986·11 cites·8 claims
- 2252US4110781ABidirectional grooved thyristor fired by activation of the beveled surfacesHITACHI LTD·Filed 1976·Granted Aug 29, 1978·13 cites·21 claims
- 2350US6180959B1Static induction semiconductor device, and driving method and drive circuit thereofHITACHI LTD·Filed 1998·Granted Jan 30, 2001·12 cites·22 claims
- 2450US4216487ABidirectional light-activated thyristor having substrate optical isolationHITACHI LTD·Filed 1978·Granted Aug 5, 1980·12 cites·11 claims
- 2549US4016592ALight-activated semiconductor-controlled rectifierHITACHI LTD·Filed 1975·Granted Apr 5, 1977·13 cites·13 claims
- 2645US4500903ASemiconductor GTO switching device with radially elongated cathode emitter regions of increasing lengthHITACHI LTD·Filed 1982·Granted Feb 19, 1985·8 cites·11 claims
- 2745US4240091ASemiconductor controlled rectifier device with small area dV/dt self-protecting meansHITACHI LTD·Filed 1979·Granted Dec 16, 1980·6 cites·8 claims
- 2843US8952391B2Silicon carbide semiconductor device and its manufacturing methodHARADA SHINSUKE·Filed 2003·Granted Feb 10, 2015·1 cites·8 claims
- 2943US6384428B1Silicon carbide semiconductor switching deviceHITACHI LTD·Filed 1998·Granted May 7, 2002·10 cites·10 claims
- 3043US5324967ATurn off type semiconductor device, method of producing the same and the power conversion apparatus employing the sameHITACHI LTD·Filed 1991·Granted Jun 28, 1994·11 cites·21 claims
- 3141US2009134402A1Silicon carbide mos field-effect transistor and process for producing the sameNAT INST OF ADV IND SCIENCE &·Filed 2005·Application pending·0 cites
- 3240US4682199AHigh voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layerHITACHI LTD·Filed 1983·Granted Jul 21, 1987·6 cites·15 claims
- 3339US2006108589A1Semiconductor deviceNAT INST OF ADVANCED UNDUST SC·Filed 2003·Application pending·0 cites
- 3438US7935628B2Silicon carbide semiconductor device and method for producing the sameNAT INST FOR ADVANCED IND SCIENCE AND TECHNOLOGY·Filed 2007·Granted May 3, 2011·0 cites·1 claims
- 3537US4028721ASemiconductor controlled rectifier deviceHITACHI LTD·Filed 1974·Granted Jun 7, 1977·4 cites·3 claims
- 3635US8835933B2Recessed gate-type silicon carbide field effect transistor and method of producing sameNAGANO TAKAHIRO·Filed 2010·Granted Sep 16, 2014·0 cites·18 claims
- 3734US6750477B2Static induction transistorHITACHI LTD·Filed 2002·Granted Jun 15, 2004·0 cites·20 claims
- 3834US5831293ASemiconductor thyristor switching device and power converter using sameHITACHI LTD·Filed 1996·Granted Nov 3, 1998·3 cites·14 claims
- 3934US4651189ASemiconductor device provided with electrically floating control electrodeHITACHI LTD·Filed 1984·Granted Mar 17, 1987·3 cites·5 claims
- 4034US3943550ALight-activated semiconductor-controlled rectifierHITACHI LTD·Filed 1974·Granted Mar 9, 1976·2 cites·8 claims
- 4133US4646122ASemiconductor device with floating remote gate turn-off meansHITACHI LTD·Filed 1984·Granted Feb 24, 1987·3 cites·7 claims
- 4232US4825270AGate turn-off thyristorHITACHI LTD·Filed 1987·Granted Apr 25, 1989·4 cites·3 claims
- 4331US2005006649A1Static induction transistor, method of manufacturing same and electric power conversion apparatusFiled 2004·Application pending·0 cites
- 4430US4404580ALight activated semiconductor deviceHITACHI LTD·Filed 1980·Granted Sep 13, 1983·1 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →