Inventor · disambiguated record

Tsung-Hao Yeh

Also filed as: YEH TSUNG-HAO

13 granted patents·12 pending applications·4 citations·filing 2021–2025

83Inventor score

Technology areasH10D H10W H10N H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD25

Top patents by PatentIndex Score

25 records

0194US11978740B2Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·2 cites·20 claims
0284US12057475B2Field effect transistor including a downward-protruding gate electrode and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·2 cites·20 claims
0383US2025338570A1High voltage device with boosted breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0476US2025359491A1Planarization-less phase change material switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0575US12218189B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
0675US2024250116A1High voltage device with boosted breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0773US11935918B2High voltage device with boosted breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
0873US2024250089A1Semiconductor-on-insulator (soi) semiconductor structures including a high-k dielectric layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0972US12484459B2Planarization-less phase change material switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
1072US2024347630A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1172US2025311445A1Diode with reduced current leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1272US2024379486A1Integrated chip with good thermal dissipation performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1370US12268103B2Phase change material switch with improved thermal confinement and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
1469US2023387209A1Integration of low and high voltage devices on substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
1568US2025204287A1Phase change material switch with improved thermal confinement and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1667US12300566B2Integrated chip with good thermal dissipation performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
1765US11862670B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
1864US12439663B2Integration of low and high voltage devices on substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
1963US12364020B2Diode with reduced current leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
2062US11961890B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·0 cites·20 claims
2160US12051748B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
2254US11532701B2Semiconductor isolation structure and method for making the semiconductor isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
2353US2024105644A1Semiconductor die package and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2452US2024357948A1Semiconductor device with phase-change material and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2550US2024130257A1Spreader configuration for phase change material (pcm) switch and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →