Inventor · disambiguated record
Tse-Liang Ying
Also filed as: YING TSE-LIANG
26 granted patents·1 pending application·802 citations·filing 1996–2011
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG21EPITECH TECHNOLOGY CORP2EPISTAR CORP1TAIWAN SEMICONDUCTOR MANUFACTO1TAIWAN SEMICONDUCTOR MANUFATUR1
Top patents by PatentIndex Score
27 records- 0196US6037222AMethod for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technologyTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 14, 2000·148 cites·15 claims
- 0290US6373369B2High efficiency thin film inductorTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 16, 2002·30 cites·6 claims
- 0386US6162686AMethod for forming a fuse in integrated circuit applicationTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 19, 2000·87 cites·12 claims
- 0486US6080637AShallow trench isolation technology to eliminate a kink effectTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 27, 2000·88 cites·25 claims
- 0583US6307213B1Method for making a fuse structure for improved repaired yields on semiconductor memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 23, 2001·31 cites·5 claims
- 0683US6168984B1Reduction of the aspect ratio of deep contact holes for embedded DRAM devicesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 2, 2001·61 cites·32 claims
- 0781US5753547AFormation of a cylindrical polysilicon module in dram technologyTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 19, 1998·43 cites·20 claims
- 0876US6207492B1Common gate and salicide word line process for low cost embedded DRAM devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 27, 2001·17 cites·23 claims
- 0974US6121073AMethod for making a fuse structure for improved repaired yields on semiconductor memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 19, 2000·40 cites·23 claims
- 1073US6436762B1Method for improving bit line to capacitor electrical failures on DRAM circuits using a wet etch-back to improve the bit-line-to-capacitor overlay marginsTAIWAN SEMICONDUCTOR MANUFACTO·Filed 2001·Granted Aug 20, 2002·19 cites·18 claims
- 1170US6433665B2High efficiency thin film inductorTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 13, 2002·9 cites·6 claims
- 1269US6214715B1Method for fabricating a self aligned contact which eliminates the key hole problem using a two step spacer depositionTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 10, 2001·37 cites·16 claims
- 1367US5811331AFormation of a stacked cylindrical capacitor module in the DRAM technologyTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 22, 1998·23 cites·27 claims
- 1460US6287939B1Method for fabricating a shallow trench isolation which is not susceptible to buried contact trench formationTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 11, 2001·25 cites·12 claims
- 1560US6194234B1Method to evaluate hemisperical grain (HSG) polysilicon surfaceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 27, 2001·23 cites·12 claims
- 1659US6278352B1High efficiency thin film inductorTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 21, 2001·12 cites·4 claims
- 1758US6187659B1Node process integration technology to improve data retention for logic based embedded dramTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 13, 2001·17 cites·17 claims
- 1856US6093619AMethod to form trench-free buried contact in process with STI technologyTAIWAN SEMICONDUCTOR MANUFATUR·Filed 1998·Granted Jul 25, 2000·25 cites·16 claims
- 1956US5885865AMethod for making low-topography buried capacitor by a two stage etching process and device madeTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Mar 23, 1999·29 cites·15 claims
- 2055US5922515AApproaches to integrate the deep contact moduleTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 13, 1999·20 cites·20 claims
- 2153US7541205B2Fabrication method of transparent electrode on visible light-emitting diodeEPISTAR CORP·Filed 2007·Granted Jun 2, 2009·0 cites·11 claims
- 2251USRE43426EFabrication method of transparent electrode on visible light-emitting diodeYING TSE-LIANG·Filed 2011·Granted May 29, 2012·0 cites·11 claims
- 2350US7192794B2Fabrication method of transparent electrode on visible light-emitting diodeEPITECH TECHNOLOGY CORP·Filed 2004·Granted Mar 20, 2007·2 cites·11 claims
- 2448US6306767B1Self-aligned etching method for forming high areal density patterned microelectronic structuresTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 23, 2001·2 cites·17 claims
- 2538US6174802B1Method for fabricating a self aligned contact which eliminates the key hole problem using a two step contact depositionTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·7 cites·13 claims
- 2638US5946596AMethod for preventing polycide line deformation by polycide hardeningTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Aug 31, 1999·7 cites·22 claims
- 2734US2007065959A1Method for manufacturing light-emitting diodeEPITECH TECHNOLOGY CORP·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →