Inventor · disambiguated record
Tsung-Hsing Yu
Also filed as: YU TSUNG J · YU TSUNG-HSING
44 granted patents·1 pending application·117 citations·filing 2004–2021
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD37TAIWAN SEMICONDUCTOR MFG2CHIN YI-MING1DHANYAKUMAR MAHAVEER SATHAIYA1HO JON-HSU1
Top patents by PatentIndex Score
45 records- 0197US9196730B1Variable channel strain of nanowire transistors to improve drive currentTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 24, 2015·29 cites·17 claims
- 0291US10084063B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 25, 2018·7 cites·19 claims
- 0391US9419136B2Dislocation stress memorization technique (DSMT) on epitaxial channel devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 16, 2016·9 cites·20 claims
- 0488US9899517B2Dislocation stress memorization technique (DSMT) on epitaxial channel devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·4 cites·20 claims
- 0588US9620591B2Semiconductor structures and methods for multi-level work function and multi-valued channel doping of nanowire transistors to improve drive currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·6 cites·15 claims
- 0688US9224814B2Process design to improve transistor variations and performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 29, 2015·7 cites·20 claims
- 0786US10741688B2Structure and method for integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 11, 2020·3 cites·20 claims
- 0884US9893183B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 13, 2018·5 cites·14 claims
- 0984US9484460B2Semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 1, 2016·4 cites·20 claims
- 1083US9831341B2Structure and method for integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 28, 2017·3 cites·13 claims
- 1182US8981479B2Multi-gate semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 17, 2015·5 cites·20 claims
- 1280US9536746B2Recess and epitaxial layer to improve transistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 3, 2017·4 cites·20 claims
- 1380US9502559B2Dislocation stress memorization technique (DSMT) on epitaxial channel devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·2 cites·20 claims
- 1479US10868175B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·2 cites·20 claims
- 1579US9728602B2Variable channel strain of nanowire transistors to improve drive currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·2 cites·20 claims
- 1678US9899475B2Epitaxial channel with a counter-halo implant to improve analog gainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·2 cites·20 claims
- 1777US8859380B2Integrated circuits and manufacturing methods thereofWU ZHIQIANG·Filed 2010·Granted Oct 14, 2014·4 cites·20 claims
- 1874US9184234B2Transistor designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 10, 2015·2 cites·20 claims
- 1973US9634132B2Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·3 cites·17 claims
- 2072US11715785B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 2172US8623716B2Multi-gate semiconductor devices and methods of forming the sameWANG CHIH-CHING·Filed 2011·Granted Jan 7, 2014·3 cites·20 claims
- 2271US11804546B2Structure and method for integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 2371US9716172B2Semiconductor device having multiple active area layers and its formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 25, 2017·2 cites·20 claims
- 2469US11502198B2Structure and method for integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 2568US9236445B2Transistor having replacement gate and epitaxially grown replacement channel regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 12, 2016·2 cites·20 claims
- 2667US10276664B2Semiconductor structures and methods for multi-dimension of nanowire diameter to improve drive currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 30, 2019·2 cites·22 claims
- 2766US11004955B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 2866US9425099B2Epitaxial channel with a counter-halo implant to improve analog gainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·1 cites·20 claims
- 2964US9837533B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 5, 2017·1 cites·20 claims
- 3064US9525031B2Epitaxial channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 20, 2016·1 cites·17 claims
- 3162US10734503B2Asymmetric semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·0 cites·20 claims
- 3261US10522657B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·20 claims
- 3360US9281372B2Metal gate structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 8, 2016·1 cites·20 claims
- 3457US10026826B2Method of forming semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 17, 2018·0 cites·20 claims
- 3555US8987824B2Multi-gate semiconductor devicesHO JON-HSU·Filed 2011·Granted Mar 24, 2015·1 cites·20 claims
- 3654US9553150B2Transistor designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·0 cites·20 claims
- 3753US9502253B2Method of manufacturing an integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·0 cites·20 claims
- 3851US9768297B2Process design to improve transistor variations and performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·0 cites·20 claims
- 3948US9502409B2Multi-gate semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·0 cites·19 claims
- 4047US9653545B2MOSFET structure with T-shaped epitaxial silicon channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 16, 2017·0 cites·20 claims
- 4146US9252236B2Counter pocket implant to improve analog gainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 2, 2016·0 cites·20 claims
- 4243US9000526B2MOSFET structure with T-shaped epitaxial silicon channelDHANYAKUMAR MAHAVEER SATHAIYA·Filed 2011·Granted Apr 7, 2015·0 cites·11 claims
- 4339US2006050295A1Switchable printer or output servo deviceCHIN YI-MING·Filed 2004·Application pending·0 cites
- 4437US9660049B2Semiconductor transistor device with dopant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 4535US8993424B2Method for forming a semiconductor transistor device with optimized dopant profileLIU CHIA-WEN·Filed 2011·Granted Mar 31, 2015·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →