Inventor · disambiguated record
Tung-Heng Hsieh
Also filed as: HSIEH TUNG-HENG
111 granted patents·26 pending applications·240 citations·filing 2005–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD124TAIWAN SEMICONDUCTOR MFG9WANG PAI-CHIEH2CHEN JIAN-HAO1LU CHIA-YU1
Top patents by PatentIndex Score
137 records- 0198US10867101B1Leakage reduction between two transistor devices on a same continuous finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 15, 2020·7 cites·20 claims
- 0296US10079289B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 18, 2018·13 cites·20 claims
- 0396US9899263B2Method of forming layout designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·13 cites·20 claims
- 0495US11631661B2Integrated circuit having angled conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 18, 2023·2 cites·20 claims
- 0595US10276445B2Leakage reduction methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·9 cites·20 claims
- 0694US10141296B2Dummy fin cell placement in an integrated circuit layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·10 cites·20 claims
- 0794US9865589B1System and method of fabricating ESD FinFET with improved metal landing in the drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·8 cites·20 claims
- 0894US9773879B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·10 cites·20 claims
- 0994US9431381B2System and method of processing cutting layout and example switching circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·11 cites·20 claims
- 1094US9336348B2Method of forming layout designTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·13 cites·20 claims
- 1193US11855073B2ESD structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1293US10515850B2Method and IC design with non-linear power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·5 cites·20 claims
- 1393US10354997B2Method for manufacturing semiconductor device with replacement gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·6 cites·20 claims
- 1492US10971588B2Semiconductor device including FinFET with self-align contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·5 cites·20 claims
- 1592US9412700B2Semiconductor device and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·10 cites·20 claims
- 1691US10515957B2Semiconductor device having finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·4 cites·20 claims
- 1791US9984191B2Cell layout and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 29, 2018·13 cites·20 claims
- 1890US12402384B2Standard cell design with dummy paddingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·1 cites·20 claims
- 1990US2025324765A1Integrated circuit having angled conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2088US10832958B2Leakage reduction methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·3 cites·20 claims
- 2188US10535746B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·4 cites·20 claims
- 2288US10340348B2Method of manufacturing finFETs with self-align contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 2, 2019·4 cites·18 claims
- 2388US10276559B2System and method of fabricating ESD FinFET with improved metal landing in the drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·3 cites·20 claims
- 2488US10204202B2Dummy fin cell placement in an integrated circuit layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 12, 2019·5 cites·20 claims
- 2588US10164034B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 2688US8859386B2Semiconductor devices, methods of manufacture thereof, and methods of forming resistorsLU CHIA-YU·Filed 2012·Granted Oct 14, 2014·13 cites·20 claims
- 2787US12419102B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 2887US10854512B2Method and IC design with non-linear power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·2 cites·20 claims
- 2987US9377680B2Method and apparatus for integrated circuit layoutTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 28, 2016·4 cites·20 claims
- 3087US9136168B2Conductive line patterningTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 15, 2015·5 cites·20 claims
- 3187US2024312838A1Method and ic design with non-linear power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3286US8901627B2Jog design in integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 2, 2014·8 cites·19 claims
- 3385US12300696B2Semiconductor devices having fins and multiple isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3484US12073165B2Standard cell designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·1 cites·20 claims
- 3584US11996329B2Method and IC design with non-linear power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 3684US11393724B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 19, 2022·1 cites·20 claims
- 3784US9859364B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·4 cites·20 claims
- 3884US9355912B2Jog design in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 31, 2016·5 cites·20 claims
- 3983US12426380B2Integrated circuit having angled conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 4083US10522634B2Finfet with self-aligned source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·2 cites·20 claims
- 4182US12288784B2Semiconductor structures having wells with protruding sections for pickup cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 4282US12068201B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 4382US9111768B2Semiconductor devices, methods of manufacture thereof, and methods of forming resistorsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 18, 2015·5 cites·20 claims
- 4482US2025255005A1Semiconductor structures having wells with protruding sections for pickup cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4582US2024346223A1Leakage reduction between two transistor devices on a same continuous finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4681US12073168B2Leakage reduction between two transistor devices on a same continuous finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 4781US10803227B2Integrated circuit layouts with line-end extensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·2 cites·20 claims
- 4880US12375080B2Fuse structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 4980US12255201B2ESD structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 5080US9425141B2Integrated circuit with elongated couplingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·3 cites·17 claims
Showing the top 50 of 137 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →