Inventor · disambiguated record
Tung Ying Lee
Also filed as: LEE TUNG-YING
232 granted patents·50 pending applications·2,585 citations·filing 1994–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD256TAIWAN SEMICONDUCTOR MFG13LEE TUNG YING4FLYTECH TECHNOLOGY CO LTD2BERRY AI INC1
Top patents by PatentIndex Score
282 records- 0199US10475902B2Spacers for nanowire-based integrated circuit device and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·124 cites·20 claims
- 0299US10032627B2Method for forming stacked nanowire transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 24, 2018·147 cites·20 claims
- 0399US9406804B2FinFETs with contact-all-aroundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 2, 2016·512 cites·20 claims
- 0498US11968844B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0598US11756921B2System and method for bonding semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·6 cites·20 claims
- 0698US11245071B2Memory cell, method of forming the same, and semiconductor device having the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·4 cites·8 claims
- 0798US10199502B2Structure of S/D contact and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 5, 2019·145 cites·20 claims
- 0898US8796666B1MOS devices with strain buffer layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·1.2k cites·20 claims
- 0997US11818967B2Sidewall protection for PCRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 1097US11605633B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·3 cites·20 claims
- 1197US10818777B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 27, 2020·4 cites·20 claims
- 1297US10361278B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·18 cites·20 claims
- 1397US10037912B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·15 cites·20 claims
- 1497US9653461B2FinFETs with low source/drain contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 16, 2017·20 cites·20 claims
- 1596US11245024B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·4 cites·20 claims
- 1696US10672667B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 2, 2020·9 cites·20 claims
- 1796US10297508B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 21, 2019·13 cites·20 claims
- 1896US10008497B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 26, 2018·13 cites·20 claims
- 1996US9876112B2Source/drain structure and manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·13 cites·20 claims
- 2096US9391201B2Source/drain structure and manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 12, 2016·19 cites·20 claims
- 2196US8426923B2Multiple-gate semiconductor device and methodLEE TUNG YING·Filed 2010·Granted Apr 23, 2013·31 cites·20 claims
- 2295US11848365B2Semiconductor device structure with source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
- 2395US10714592B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 14, 2020·11 cites·18 claims
- 2494US12021153B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·1 cites·20 claims
- 2594US11817488B2Method and related apparatus for integrating electronic memory in an integrated chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 2694US10930498B2Methods for producing nanowire stack GAA device with inner spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·6 cites·16 claims
- 2794US10636891B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·10 cites·20 claims
- 2894US10497624B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·10 cites·20 claims
- 2993US11545582B2Method for forming gate-all-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·2 cites·20 claims
- 3093US11056400B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·5 cites·20 claims
- 3193US10867841B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
- 3293US10825915B2Spacers for nanowire-based integrated circuit device and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·6 cites·20 claims
- 3393US10535738B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
- 3492US11037828B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·6 cites·20 claims
- 3592US2025366074A1Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3691US11387360B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 3791US11322619B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
- 3891US9362386B2FETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·8 cites·17 claims
- 3991US8551841B2IO ESD device and methods for forming the sameLEE TUNG YING·Filed 2012·Granted Oct 8, 2013·12 cites·12 claims
- 4090US12040400B2Method for forming semiconductor device structure with nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
- 4190US11798849B2Semiconductor device with fin end spacer plug and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 4290US11355605B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
- 4390US10770290B2Method for forming stacked nanowire transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·4 cites·19 claims
- 4490US9455325B2Fin field-effect transistors having controlled fin heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 27, 2016·6 cites·20 claims
- 4590US9412814B2Structure and formation method of FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·10 cites·20 claims
- 4689US12324362B2Phase-change memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 4789US10707347B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·3 cites·20 claims
- 4889US10490631B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·3 cites·20 claims
- 4989US10290548B2Semiconductor device structure with semiconductor wireTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·4 cites·20 claims
- 5088US12336192B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
Showing the top 50 of 282 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Tung Ying Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →