Inventor · disambiguated record
Tushar P. Merchant
Also filed as: MERCHANT TUSHAR P · MERCHANT TUSHAR PRAFUL
24 granted patents·6 pending applications·286 citations·filing 2002–2025
95Inventor score
Top patents by PatentIndex Score
30 records- 0195US7719039B2Phase change memory structures including pillarsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 18, 2010·36 cites·20 claims
- 0292US11776856B2Nanosheet transistors with different gate materials in same stack and method of makingNXP BV·Filed 2021·Granted Oct 3, 2023·2 cites·11 claims
- 0392US11605729B2Method of making nanosheet local capacitors and nvm devicesNXP BV·Filed 2021·Granted Mar 14, 2023·2 cites·18 claims
- 0492US6808986B2Method of forming nanocrystals in a memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Oct 26, 2004·60 cites·15 claims
- 0592US6784103B1Method of formation of nanocrystals on a semiconductor structureFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 31, 2004·60 cites·23 claims
- 0689US7932189B2Process of forming an electronic device including a layer of discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 26, 2011·16 cites·20 claims
- 0789US6717226B2Transistor with layered high-K gate dielectric and method thereforMOTOROLA INC·Filed 2002·Granted Apr 6, 2004·52 cites·7 claims
- 0887US8043888B2Phase change memory cell with heater and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 25, 2011·16 cites·4 claims
- 0982US8168468B2Method of making a semiconductor device including a bridgeable materialMATHEW VARUGHESE·Filed 2008·Granted May 1, 2012·11 cites·20 claims
- 1076US7811851B2Phase change memory structuresFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 12, 2010·6 cites·11 claims
- 1176US7704830B2Split gate memory cell using sidewall spacersFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 27, 2010·8 cites·19 claims
- 1275US7700438B2MOS device with nano-crystal gate structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 20, 2010·5 cites·15 claims
- 1375US2025301685A1Nanosheet transistors with reduced source/drain resistance and associated method of manufactureNXP USA INC·Filed 2025·Application pending·0 cites
- 1473US8097873B2Phase change memory structuresMURALIDHAR RAMACHANDRAN·Filed 2010·Granted Jan 17, 2012·3 cites·20 claims
- 1567US7928502B2Transistor devices with nano-crystal gate structuresFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Apr 19, 2011·2 cites·19 claims
- 1665US8563355B2Method of making a phase change memory cell having a silicide heater in conjunction with a FinFETMATHEW LEO·Filed 2008·Granted Oct 22, 2013·3 cites·10 claims
- 1764US12363936B2Nanosheet transistors with reduced source/drain resistance and associated method of manufactureNXP USA INC·Filed 2022·Granted Jul 15, 2025·0 cites·14 claims
- 1863US11685647B2Nanosheet MEMs sensor device and method of manufactureNXP BV·Filed 2021·Granted Jun 27, 2023·0 cites·21 claims
- 1962US8575588B2Phase change memory cell with heater and method thereforMATHEW LEO·Filed 2011·Granted Nov 5, 2013·2 cites·15 claims
- 2062US2025089359A1Integration of multimodal transistors with transistor fabrication sequenceNXP USA INC·Filed 2023·Application pending·0 cites
- 2161US7642163B2Process of forming an electronic device including discontinuous storage elements within a dielectric layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 5, 2010·2 cites·20 claims
- 2257US12483258B2DAC and ADC using MMT devicesNXP BV·Filed 2024·Granted Nov 25, 2025·0 cites·21 claims
- 2351US11769797B2Method of making nanosheet fringe capacitors or MEMS sensors with dissimilar electrode materialsNXP BV·Filed 2021·Granted Sep 26, 2023·0 cites·13 claims
- 2450US12009267B2Nanosheet device with different gate lengths in same stackNXP BV·Filed 2021·Granted Jun 11, 2024·0 cites·12 claims
- 2540US7528047B2Self-aligned split gate memory cell and method of formingFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 5, 2009·0 cites·16 claims
- 2638US2007096226A1MOSFET dielectric including a diffusion barrierLIU CHUN-LI·Filed 2005·Application pending·0 cites
- 2737US2007202645A1Method for forming a deposited oxide layerLUO TIEN YING·Filed 2007·Application pending·0 cites
- 2833US9112060B2Low-leakage, high-capacitance capacitor structures and method of makingMERCHANT TUSHAR P·Filed 2011·Granted Aug 18, 2015·0 cites·17 claims
- 2932US2009061608A1Method of forming a semiconductor device having a silicon dioxide layerMERCHANT TUSHAR P·Filed 2007·Application pending·0 cites
- 3030US2006189079A1Method of forming nanoclustersMERCHANT TUSHAR P·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →