Inventor · disambiguated record
Tunenori Yamauchi
Also filed as: YAMAUCHI TUNENORI
8 granted patents·131 citations·filing 1987–2010
86Inventor score
Top patents by PatentIndex Score
8 records- 0176US4980303AManufacturing method of a Bi-MIS semiconductor deviceFUJITSU LTD·Filed 1988·Granted Dec 25, 1990·36 cites·10 claims
- 0274US5705425AProcess for manufacturing semiconductor devices separated by an air-bridgeFUJITSU LTD·Filed 1996·Granted Jan 6, 1998·50 cites·19 claims
- 0347US5045484AFabrication method of a BIMOS semiconductor deviceFUJITSU LTD·Filed 1990·Granted Sep 3, 1991·19 cites·6 claims
- 0438US7951727B2Capacitor fabrication methodFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted May 31, 2011·0 cites·5 claims
- 0538US7696107B2Nitride film forming method, semiconductor device fabrication method, capacitor fabrication method and nitride film forming apparatusFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 13, 2010·0 cites·10 claims
- 0637US5151765ASemiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristicsFUJITSU LTD·Filed 1991·Granted Sep 29, 1992·7 cites·12 claims
- 0735US5409843AMethod of producing a semiconductor device by forming contacts after flowing a glass layerFUJITSU LTD·Filed 1992·Granted Apr 25, 1995·14 cites·17 claims
- 0830US4783423AFabrication of a semiconductor device containing deep emitter and another transistor with shallow doped regionFUJITSU LTD·Filed 1987·Granted Nov 8, 1988·5 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →