Inventor · disambiguated record
Tzu-Heng Chang
Also filed as: CHANG TZU YUN · CHANG TZU-HENG
39 granted patents·9 pending applications·152 citations·filing 2003–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD36TAIWAN SEMICONDUCTOR MFG2CHANG LIANG-TUNG1CHANG TZU-HENG1CHEN BO-TING1
Top patents by PatentIndex Score
48 records- 0196US9172242B2Electrostatic discharge protection for three dimensional integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Oct 27, 2015·24 cites·20 claims
- 0295US12094870B2Electrostatic discharge circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·2 cites·20 claims
- 0395US11798936B2Electrostatic discharge circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·3 cites·20 claims
- 0495US8759871B2Bidirectional dual-SCR circuit for ESD protectionSONG MING-HSIANG·Filed 2011·Granted Jun 24, 2014·31 cites·12 claims
- 0594US9608616B1Power clamp circuits and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 28, 2017·10 cites·20 claims
- 0694US8867183B2ESD protection techniquesCHEN BO-TING·Filed 2011·Granted Oct 21, 2014·18 cites·19 claims
- 0792US10325906B2ESD testing structure, method of using same and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 18, 2019·7 cites·20 claims
- 0892US8963200B2Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protectionLEE JAM-WEM·Filed 2012·Granted Feb 24, 2015·13 cites·19 claims
- 0991US10629588B2ESD hard backend structures in nanometer dimensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·3 cites·20 claims
- 1090US8730626B2Electrostatic discharge protectionTSENG JEN-CHOU·Filed 2011·Granted May 20, 2014·16 cites·20 claims
- 1187US10840237B2Electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·4 cites·20 claims
- 1286US12453186B2Electrostatic discharge circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
- 1386US12068597B2Power clamp deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·1 cites·20 claims
- 1486US10170461B2ESD hard backend structures in nanometer dimensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 1, 2019·2 cites·20 claims
- 1583US11264374B2Method of forming electrostatic discharge (ESD) testing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·1 cites·20 claims
- 1683US10957687B2ESD hard backend structures in nanometer dimensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 23, 2021·1 cites·20 claims
- 1783US9443840B2Methods and apparatus for ESD structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·5 cites·20 claims
- 1879US11935885B2Device including integrated electrostatic discharge protection componentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 1977US11676959B2Electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 13, 2023·0 cites·20 claims
- 2076US9979186B2Electrostatic discharge protection for three dimensional integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·2 cites·20 claims
- 2175US12272658B2Method of making electrostatic discharge protection cell and antenna integrated with through silicon viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
- 2275US9576945B2Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·2 cites·20 claims
- 2374US10756082B2Method of forming electrostatic discharge (ESD) testing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·1 cites·20 claims
- 2474US2024348044A1Power clamp deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2571US2024088651A1Failsafe Input/Output Electrostatic Discharge Protection With DiodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2670US11562996B2Device including integrated electrostatic discharge protection componentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·0 cites·20 claims
- 2770US11557586B2Device including integrated electrostatic discharge protection componentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 2868US2025239541A1Method of making electrostatic discharge protection cell and antenna integrated with through silicon viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2967US11870247B2Failsafe input/output electrostatic discharge protection with diodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 3067US10284190B2Voltage detector circuits and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·1 cites·20 claims
- 3166US11404409B2Electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 3263US9620957B2Electrostatic discharge (ESD) control circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 11, 2017·1 cites·20 claims
- 3362US9245878B2Bidirectional dual-SCR circuit for ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 26, 2016·1 cites·16 claims
- 3462US8692289B2Fast turn on silicon controlled rectifiers for ESD protectionSU YU-TI·Filed 2012·Granted Apr 8, 2014·2 cites·20 claims
- 3561US10741543B2Device including integrated electrostatic discharge protection componentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·0 cites·20 claims
- 3661US9281681B2ESD protection circuits and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Mar 8, 2016·1 cites·10 claims
- 3760US10964651B2Method and apparatus of ESD protection in stacked die semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·0 cites·20 claims
- 3858US2025324768A1Semiconductor packages and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3955US10163823B2Method and apparatus of ESD protection in stacked die semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·0 cites·20 claims
- 4054US11942441B2Electrostatic discharge protection cell and antenna integrated with through silicon viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 4154US9362252B2Method and apparatus of ESD protection in stacked die semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 7, 2016·0 cites·20 claims
- 4253US9842833B2Electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 12, 2017·0 cites·20 claims
- 4351US2012329203A1Method for Forming Silicon Thin FilmCHANG LIANG-TUNG·Filed 2011·Application pending·0 cites
- 4448US8921943B2Methods and apparatus for ESD structuresTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 30, 2014·0 cites·20 claims
- 4540US2009230400A1Thin film transistor and fabricating method thereofCHUNGHWA PICTURE TUBES LTD·Filed 2008·Application pending·0 cites
- 4637US2015109705A1Method and associated apparatus for performing electrostatic discharge protectionCHANG TZU-HENG·Filed 2014·Application pending·0 cites
- 4735US2004147070A1Ultra-shallow junction formation for nano MOS devices using amorphous-si capping layerUNIV NAT CHIAO TUNG·Filed 2003·Application pending·0 cites
- 4834US2004106260A1Process of utilizing CF4 plasma pretreatment to improve high-k dielectric materialsFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →