Inventor · disambiguated record
Tze-Chiang Chen
Also filed as: CHEN TZE-CHIANG
91 granted patents·12 pending applications·1,679 citations·filing 1989–2023
99Inventor score
Top patents by PatentIndex Score
103 records- 0198US6566177B1Silicon-on-insulator vertical array device trench capacitor DRAMIBM·Filed 1999·Granted May 20, 2003·279 cites·9 claims
- 0297US11585871B1Rapid carrier-resolved photo-hall analysisIBM·Filed 2021·Granted Feb 21, 2023·6 cites·20 claims
- 0396US6432754B1Double SOI device with recess etch and epitaxyIBM·Filed 2001·Granted Aug 13, 2002·141 cites·24 claims
- 0496US6319794B1Structure and method for producing low leakage isolation devicesIBM·Filed 1998·Granted Nov 20, 2001·258 cites·19 claims
- 0595US8741678B2Transparent conductive electrode stack containing carbon-containing materialIBM·Filed 2012·Granted Jun 3, 2014·12 cites·17 claims
- 0694US8969115B2Transparent conductive electrode stack containing carbon-containing materialIBM·Filed 2014·Granted Mar 3, 2015·10 cites·14 claims
- 0793US9166181B2Hybrid junction field-effect transistor and active matrix structureIBM·Filed 2014·Granted Oct 20, 2015·8 cites·9 claims
- 0893US8975635B2Co-integration of elemental semiconductor devices and compound semiconductor devicesIBM·Filed 2012·Granted Mar 10, 2015·11 cites·20 claims
- 0993US8927323B2Interdigitated back contact heterojunction photovoltaic deviceIBM·Filed 2013·Granted Jan 6, 2015·6 cites·10 claims
- 1093US8841177B2Co-integration of elemental semiconductor devices and compound semiconductor devicesIBM·Filed 2012·Granted Sep 23, 2014·11 cites·25 claims
- 1192US6426252B1Silicon-on-insulator vertical array DRAM cell with self-aligned buried strapIBM·Filed 1999·Granted Jul 30, 2002·95 cites·29 claims
- 1291US9318572B2Ambipolar synaptic devicesIBM·Filed 2015·Granted Apr 19, 2016·7 cites·5 claims
- 1391US9041079B1Optical latch and synaptic switchIBM·Filed 2014·Granted May 26, 2015·6 cites·20 claims
- 1491US7416905B2Method of fabricating a magnetic shift registerIBM·Filed 2005·Granted Aug 26, 2008·17 cites·24 claims
- 1591US7108797B2Method of fabricating a shiftable magnetic shift registerIBM·Filed 2004·Granted Sep 19, 2006·37 cites·67 claims
- 1689US6885080B2Deep trench isolation of embedded DRAM for improved latch-up immunityIBM·Filed 2002·Granted Apr 26, 2005·48 cites·11 claims
- 1788US8906734B2Embedded junction in hetero-structured back-surface field for photovoltaic devicesIBM·Filed 2012·Granted Dec 9, 2014·4 cites·25 claims
- 1887US6521949B2SOI transistor with polysilicon seedIBM·Filed 2001·Granted Feb 18, 2003·41 cites·2 claims
- 1986US9472641B2Ambipolar synaptic devicesIBM·Filed 2015·Granted Oct 18, 2016·4 cites·10 claims
- 2086US7598097B2Method of fabricating a magnetic shift registerIBM·Filed 2008·Granted Oct 6, 2009·11 cites·8 claims
- 2186US6955926B2Method of fabricating data tracks for use in a magnetic shift register memory deviceIBM·Filed 2004·Granted Oct 18, 2005·37 cites·67 claims
- 2286US6271578B1Crack stopsSIEMENS AG·Filed 1998·Granted Aug 7, 2001·60 cites·3 claims
- 2386US6025639ACrack stopsSIEMENS AG·Filed 1998·Granted Feb 15, 2000·60 cites·4 claims
- 2486US5789302ACrack stopsSIEMENS AG·Filed 1997·Granted Aug 4, 1998·60 cites·13 claims
- 2585US10008624B2Embedded junction in hetero-structured back-surface field for photovoltaic devicesIBM·Filed 2015·Granted Jun 26, 2018·2 cites·18 claims
- 2685US9620726B2Hybrid junction field-effect transistor and active matrix structureIBM·Filed 2015·Granted Apr 11, 2017·2 cites·7 claims
- 2785US9608220B1Hybrid heterojunction photovoltaic deviceIBM·Filed 2015·Granted Mar 28, 2017·2 cites·8 claims
- 2885US9379342B1Semi-conductor device with programmable responseIBM·Filed 2016·Granted Jun 28, 2016·2 cites·20 claims
- 2985US9379340B1Semiconductor device with programmable responseIBM·Filed 2016·Granted Jun 28, 2016·2 cites·20 claims
- 3085US9147615B2Ambipolar synaptic devicesIBM·Filed 2014·Granted Sep 29, 2015·9 cites·4 claims
- 3185US8383483B2High performance CMOS circuits, and methods for fabricating sameIBM·Filed 2009·Granted Feb 26, 2013·10 cites·15 claims
- 3283US9318717B1Semi-conductor device with programmable responseIBM·Filed 2015·Granted Apr 19, 2016·2 cites·20 claims
- 3383US7671421B2CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materialsIBM·Filed 2006·Granted Mar 2, 2010·8 cites·13 claims
- 3483US7435652B1Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFETIBM·Filed 2007·Granted Oct 14, 2008·11 cites·20 claims
- 3583US6878611B2Patterned strained silicon for high performance circuitsIBM·Filed 2003·Granted Apr 12, 2005·29 cites·20 claims
- 3683US5117271ALow capacitance bipolar junction transistor and fabrication process therforIBM·Filed 1990·Granted May 26, 1992·56 cites·20 claims
- 3782US10476016B2Ambipolar synaptic devicesIBM·Filed 2018·Granted Nov 12, 2019·2 cites·20 claims
- 3882US10403779B2Cost-efficient high power PECVD deposition apparatus for solar cellsIBM·Filed 2015·Granted Sep 3, 2019·2 cites·7 claims
- 3982US9202959B2Embedded junction in hetero-structured back-surface field for photovoltaic devicesIBM·Filed 2012·Granted Dec 1, 2015·2 cites·24 claims
- 4082US6887783B2Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereofINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 3, 2005·26 cites·18 claims
- 4181US8158481B2CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materialsCHEN TZE-CHIANG·Filed 2010·Granted Apr 17, 2012·5 cites·8 claims
- 4281US5106767AProcess for fabricating low capacitance bipolar junction transistorIBM·Filed 1991·Granted Apr 21, 1992·56 cites·19 claims
- 4380US10128452B2Hybrid junction field-effect transistor and active matrix structureIBM·Filed 2017·Granted Nov 13, 2018·2 cites·11 claims
- 4480US8138574B2PCM with poly-emitter BJT access devicesCHEN TZE-CHIANG·Filed 2009·Granted Mar 20, 2012·6 cites·11 claims
- 4579US7084460B2Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substratesIBM·Filed 2003·Granted Aug 1, 2006·20 cites·18 claims
- 4678US8492852B2Interface structure for channel mobility improvement in high-k metal gate stackCHEN TZE-CHIANG·Filed 2010·Granted Jul 23, 2013·5 cites·30 claims
- 4778US5017990ARaised base bipolar transistor structure and its method of fabricationIBM·Filed 1989·Granted May 21, 1991·34 cites·19 claims
- 4876US9972797B2Ambipolar synaptic devicesIBM·Filed 2017·Granted May 15, 2018·1 cites·12 claims
- 4974US10304947B1Smoothing surface roughness of III-V semiconductor fins formed from silicon mandrels by regrowthIBM·Filed 2017·Granted May 28, 2019·1 cites·15 claims
- 5074US9246113B2Junction field-effect quantum dot memory switchIBM·Filed 2014·Granted Jan 26, 2016·3 cites·20 claims
Showing the top 50 of 103 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Tze-Chiang Chen files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →