Inventor · disambiguated record
Tzung-Chi Lee
Also filed as: LEE TZUNG-CHI
18 granted patents·82 citations·filing 2006–2022
93Inventor score
Top patents by PatentIndex Score
18 records- 0196US10079289B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 18, 2018·13 cites·20 claims
- 0294US10141296B2Dummy fin cell placement in an integrated circuit layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·10 cites·20 claims
- 0394US9865589B1System and method of fabricating ESD FinFET with improved metal landing in the drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·8 cites·20 claims
- 0488US10535746B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·4 cites·20 claims
- 0588US10276559B2System and method of fabricating ESD FinFET with improved metal landing in the drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·3 cites·20 claims
- 0688US10204202B2Dummy fin cell placement in an integrated circuit layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 12, 2019·5 cites·20 claims
- 0788US8125051B2Device layout for gate last processCHUANG HARRY·Filed 2009·Granted Feb 28, 2012·16 cites·20 claims
- 0884US8530326B2Method of fabricating a dummy gate structure in a gate last processLAI SU-CHEN·Filed 2012·Granted Sep 10, 2013·6 cites·17 claims
- 0984US8237227B2Dummy gate structure for gate last processLAI SU-CHEN·Filed 2009·Granted Aug 7, 2012·10 cites·14 claims
- 1078US8368136B2Integrating a capacitor in a metal gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Feb 5, 2013·7 cites·20 claims
- 1167US12199087B2Dummy poly layout for high density devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 1267US11043572B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·0 cites·20 claims
- 1367US11004842B2System and method of fabricating ESD FinFET with improved metal landing in the drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 1465US10453837B2System and method of fabricating ESD finFET with improved metal landing in the drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 22, 2019·0 cites·20 claims
- 1559US11881477B2Dummy poly layout for high density devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 23, 2024·0 cites·20 claims
- 1654US7812379B2SOI devicesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 12, 2010·0 cites·8 claims
- 1754US7803674B2Methods for fabricating SOI devicesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Sep 28, 2010·0 cites·8 claims
- 1850US7550795B2SOI devices and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 23, 2009·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →