Inventor · disambiguated record
Tze-Chung Lin
Also filed as: LIN TZE-CHUNG
24 granted patents·12 pending applications·6 citations·filing 2018–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD36
Top patents by PatentIndex Score
36 records- 0190US11855192B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0289US12033863B2Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·1 cites·20 claims
- 0389US2025331214A1Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0488US11646234B2Method for FinFET fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·1 cites·20 claims
- 0587US12389619B2Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 0687US12021125B2High selectivity etching with germanium-containing gasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·1 cites·20 claims
- 0785US2025366005A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0883US11973129B2Semiconductor device structure with inner spacer layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·0 cites·20 claims
- 0982US12224210B2Method for FinFet fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1081US2025366119A1Dry Etching Of Semiconductor Structures With Fluorine-Containing GasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1180US2025089331A1Method for semiconductor device structure cross reference to related applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1280US2025105019A1Semiconductor manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1378US2025185346A1Method For FinFET Fabrication And Structure ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1478US2024347345A1Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1577US12336252B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 1677US11605728B2Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 1777US2025344499A1Stacked transistor channel regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1875US12198939B2Technique for semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 1974US12154970B2Method for semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 2074US11222794B2Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·1 cites·20 claims
- 2174US2024097011A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2272US11830928B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 2372US2024321642A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2471US11373878B2Technique for semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 28, 2022·0 cites·20 claims
- 2569US12471344B2Dry etching of semiconductor structures with fluorine-containing gasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 11, 2025·0 cites·20 claims
- 2667US2025040238A1Stacked transistor channel regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2766US11417751B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 2865US11152491B2Method for forming semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·20 claims
- 2964US11107904B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 3064US11056393B2Method for FinFET fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 3163US12217961B2Hard mask trimming in method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 3261US12501670B2Isolation structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 3361US12033895B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·20 claims
- 3459US2025311327A1Method for manufacturing semiconductor device having complementary field-effect transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3555US12513952B2Method for fabricating a semiconductor device including etching nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 3645US11201243B2Nanowire stack GAA device and methods for producing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →