Inventor · disambiguated record
Tzung-Yi Tsai
Also filed as: TSAI TZUNG-YI
13 granted patents·3 pending applications·15 citations·filing 2017–2025
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD16
Top patents by PatentIndex Score
16 records- 0190US10522409B2Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·5 cites·20 claims
- 0288US12349493B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 1, 2025·2 cites·20 claims
- 0385US11302535B2Performing annealing process to improve fin quality of a FinFET semiconductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 12, 2022·4 cites·20 claims
- 0483US11088022B2Different isolation liners for different type FinFETs and associated isolation feature fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·2 cites·19 claims
- 0582US11848339B2Semiconductor structure including isolation structure and method for forming isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·1 cites·20 claims
- 0680US12020988B2Fin field effect transistor (FinFET) device structure with dummy fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 0776US2025294869A1Novel liner structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0876US2024379381A1Performing annealing process to improve fin quality of a finfet semiconductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0972US2025287714A1Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1071US11848230B2Different isolation liners for different type FinFETs and associated isolation feature fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 1171US11569130B2Fin field effect transistor (FinFET) device structure with dummy Fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 1271US10395937B2Fin patterning for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 27, 2019·1 cites·20 claims
- 1370US12142490B2Performing annealing process to improve Fin quality of a FinFET semiconductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·17 claims
- 1469US12324232B2Liner structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 1567US10811318B2FIN field effect transistor (FinFET) device structure with dummy FIN structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·0 cites·20 claims
- 1653US11437372B2Liner structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →