Inventor · disambiguated record
Tzu-Jui Wang
Also filed as: WANG TZU-JUI
49 granted patents·46 pending applications·235 citations·filing 2011–2025
98Inventor score
Top patents by PatentIndex Score
95 records- 0198US9923013B1Sensor device, image sensor array and manufacturing method of sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·32 cites·17 claims
- 0296US9620548B1Image sensor with wide contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·14 cites·20 claims
- 0396US8629524B2Apparatus for vertically integrated backside illuminated image sensorsWANG TZU-JUI·Filed 2012·Granted Jan 14, 2014·26 cites·12 claims
- 0496US8513587B2Image sensor with anti-reflection layer and method of manufacturing the sameWANG TZU-JUI·Filed 2011·Granted Aug 20, 2013·31 cites·20 claims
- 0595US12507490B2Semiconductor device including germanium region disposed in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·2 cites·20 claims
- 0695US12062671B2Image sensor with photosensitivity enhancement regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·2 cites·20 claims
- 0795US11227889B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 0895US10276618B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·8 cites·20 claims
- 0995US10177186B2Pixel structure of image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 8, 2019·11 cites·20 claims
- 1095US9136302B2Apparatus for vertically integrated backside illuminated image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 15, 2015·11 cites·20 claims
- 1193US9954022B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·7 cites·20 claims
- 1293US9659987B2Approach for reducing pixel pitch using vertical transfer gates and implant isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 23, 2017·10 cites·20 claims
- 1393US9356069B2Photo diode and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·4 cites·20 claims
- 1493US9153565B2Image sensors with a high fill-factorCHEN SZU-YING·Filed 2012·Granted Oct 6, 2015·14 cites·20 claims
- 1592US10672934B2SPAD image sensor and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·7 cites·20 claims
- 1692US9064989B2Photo diode and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 23, 2015·6 cites·12 claims
- 1791US9412725B2Method and apparatus for image sensor packagingCHEN SZU-YING·Filed 2012·Granted Aug 9, 2016·12 cites·23 claims
- 1889US11264525B2SPAD image sensor and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 1989US9443836B2Forming pixel units of image sensors through bonding two chipsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·8 cites·20 claims
- 2088US9406711B2Apparatus and method for backside illuminated image sensorsCHEN SZU-YING·Filed 2012·Granted Aug 2, 2016·5 cites·20 claims
- 2186US12211876B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 2286US9917123B2Method and apparatus for image sensor packagingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 13, 2018·4 cites·20 claims
- 2386US2025349597A1Image sensor with dual trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2486US2025318308A1Image sensor having a gate dielectric structure for improved device scalingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2586US2025359388A1Germanium-containing photodetector and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2685US12396289B2Germanium-containing photodetector and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 2785US10510789B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
- 2884US8710607B2Method and apparatus for image sensor packagingCHEN SZU-YING·Filed 2012·Granted Apr 29, 2014·5 cites·20 claims
- 2984US2025098353A1Image sensor having a gate dielectric structure for improved device scalingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3083US2025351593A1Structure and Method for Backside-Illuminated Image DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3182US10096645B2Method and apparatus for image sensor packagingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 9, 2018·3 cites·20 claims
- 3282US2025331323A1Passivation for a vertical transfer gate in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3382US2025338664A1Image sensor having a lateral photodetector structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3480US12051763B2Germanium-containing photodetector and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 3580US2025318287A1Semiconductor device including germanium region disposed in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3679US12451391B2Image sensor with dual trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 3779US11728366B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3879US2024363653A1Image sensor with photosensitivity enhancement regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3979US2025351608A1Image sensor integrated chip structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4078US12191336B2Image sensor having a gate dielectric structure for improved device scalingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 4178US2025351611A1Image sensor packaging and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4277US9064986B2Photo diode and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 23, 2015·1 cites·20 claims
- 4376US12426390B2Passivation for a vertical transfer gate in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 4476US11121159B2Pixel structure of image sensor having dielectric layer surrounding photo conversion layer and color filterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 4576US10510912B2Image sensor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 4676US2025287121A1Integrated capacitor for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4776US2025351609A1Stacked image sensors and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4876US2025324802A1Pixel with dual-pd layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4975US2025318311A1Bonding structures for stacked image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5073US2025324801A1Stacked cmos image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →