Inventor · disambiguated record
Tzu-Chan Weng
Also filed as: WENG TZU CHAN
37 granted patents·6 pending applications·303 citations·filing 2007–2025
96Inventor score
Top patents by PatentIndex Score
43 records- 0198US9812363B1FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 7, 2017·237 cites·20 claims
- 0296US10170555B1Intermetallic doping film with diffusion in source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·19 cites·20 claims
- 0395US10297555B2Integrated circuit structure having crown-shaped semiconductor strips and recesses in the substrate from etched dummy finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·10 cites·20 claims
- 0494US10522408B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·8 cites·20 claims
- 0592US12002855B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·1 cites·20 claims
- 0692US10163715B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·6 cites·20 claims
- 0790US10510875B2Source and drain structure with reduced contact resistance and enhanced mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 0889US10679950B2Methods of forming recesses in substrates by etching dummy FinsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·4 cites·20 claims
- 0984US11522050B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 1082US11430893B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·1 cites·20 claims
- 1181US11545562B2Source and drain structure with reduced contact resistance and enhanced mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 3, 2023·2 cites·20 claims
- 1280US12424568B2Method for forming recesses in a substrate by etching dummy finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 1379US11600713B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 7, 2023·2 cites·20 claims
- 1478US2024371650A1Fin field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1577US12125707B2Fin field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
- 1677US2024297253A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1777US2025311266A1Source and Drain Structure with Reduced Contact Resistance and Enhanced MobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1876US10163650B2System and method for selective nitride etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·2 cites·20 claims
- 1975US12015085B2Method of manufacturing a semiconductor device including etching polysiliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 2074US11488912B2Method for forming recesses in a substrate by etching dummy finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·19 claims
- 2174US10734246B2Heat shield for chamber door and devices manufactured using sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·1 cites·20 claims
- 2274US2024274668A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2371US12432955B2Source and drain structure with reduced contact resistance and enhanced mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 2470US12074032B2Heat shield for chamber door and devices manufactured using sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 2569US12300741B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2668US11532481B2Fin field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 2767US10504720B2Etching using chamber with top plate formed of non-oxygen containing materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·1 cites·20 claims
- 2866US10861800B2Integrated circuit structure having a crown-shaped semiconductor strip and an isolation region recessed in the substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 2966US7563719B2Dual damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jul 21, 2009·2 cites·14 claims
- 3065US9721805B1Formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·1 cites·20 claims
- 3160US10825739B2FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·0 cites·20 claims
- 3258US9136109B2Sacrificial oxide with uniform thicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 15, 2015·0 cites·20 claims
- 3355US11031252B2Heat shield for chamber door and devices manufactured using sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 8, 2021·0 cites·26 claims
- 3454US11120986B2Etching using chamber with top plate formed of non-oxygen containing materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·19 claims
- 3551US10510615B2FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·0 cites·20 claims
- 3651US9391072B2Sacrificial oxide with uniform thicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 12, 2016·0 cites·20 claims
- 3747US8049213B2Feature dimension measurementTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 1, 2011·0 cites·9 claims
- 3840US10032661B2Semiconductor device, method, and tool of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·0 cites·20 claims
- 3940US9543410B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·0 cites·20 claims
- 4039US2015004769A1Method of Semiconductor Integrated Circuit FabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
- 4138US10163642B2Semiconductor device, method and tool of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·0 cites·17 claims
- 4236US10269938B2Semiconductor device structure having a doped passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·0 cites·20 claims
- 4335US2010240220A1Process for stripping photoresist and removing dielectric linerTAIWAN SEMICONDUCTOR MFG·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →