Inventor · disambiguated record
Ugo Russo
Also filed as: RUSSO UGO
41 granted patents·9 pending applications·115 citations·filing 2011–2025
97Inventor score
Files withMICRON TECHNOLOGY INC42INTEL CORP2MICRON TECHNOLGY INC2RUSSO UGO2LODESTAR LICENSING GROUP LLC1
Top patents by PatentIndex Score
50 records- 0196US10453855B2Void formation in charge trap structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 22, 2019·20 cites·27 claims
- 0295US11569255B2Void formation in charge trap structuresMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 31, 2023·3 cites·20 claims
- 0395US9299930B2Memory cells, integrated devices, and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 29, 2016·13 cites·13 claims
- 0494US11901014B2Partial block handling in a non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 13, 2024·4 cites·20 claims
- 0594US11462281B1Intervallic dynamic start voltage and program verify sampling in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 4, 2022·5 cites·20 claims
- 0694US11037951B2Void formation in charge trap structuresMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 15, 2021·8 cites·28 claims
- 0794US8723155B2Memory cells and integrated devicesREDAELLI ANDREA·Filed 2011·Granted May 13, 2014·21 cites·12 claims
- 0893US11983067B2Adjustment of code rate as function of memory endurance state metricMICRON TECHNOLOGY INC·Filed 2022·Granted May 14, 2024·2 cites·20 claims
- 0992US11922029B2Modified read counter incrementing scheme in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 1089US9559146B2Phase-change memory cell implant for dummy array leakage reductionINTEL CORP·Filed 2014·Granted Jan 31, 2017·6 cites·12 claims
- 1187US12400688B2Assemblies comprising memory cells and select gates; and methods of forming assembliesMICRON TECHNOLOGY INC·Filed 2024·Granted Aug 26, 2025·0 cites·28 claims
- 1287US10128315B2Methods of forming phase change memory apparatusesMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 13, 2018·4 cites·20 claims
- 1387US9449683B2Memory cells having a plurality of resistance variable materialsMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 20, 2016·6 cites·20 claims
- 1486US12501619B2Microelectronic devices with tunneling structures having partial-height high-κ material regionsLODESTAR LICENSING GROUP LLC·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 1585US8964448B2Memory cells having a plurality of resistance variable materialsRUSSO UGO·Filed 2012·Granted Feb 24, 2015·7 cites·22 claims
- 1685US2025370634A1Modified read counter incrementing scheme in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1783US2025335128A1Charge loss mitigation throughout memory device lifecycle by proactive window shiftMICRON TECHNOLGY INC·Filed 2025·Application pending·0 cites
- 1882US9627440B2Phase change memory apparatusesMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 18, 2017·3 cites·16 claims
- 1981US10901622B2Adjustable NAND write performanceMICRON TECHNOLOGY INC·Filed 2018·Granted Jan 26, 2021·5 cites·24 claims
- 2081US2025362815A1Selectively programming retired wordlines of a memory deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2180US12353771B2Charge loss mitigation throughout memory device lifecycle by proactive window shiftMICRON TECHNOLGY INC·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 2279US12417035B2Modified read counter incrementing scheme in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2024·Granted Sep 16, 2025·0 cites·18 claims
- 2379US12326782B2Adjustment of code rate as function of memory endurance state metricMICRON TECHNOLOGY INC·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 2477US9837604B2Phase-change memory cell implant for dummy array leakage reductionINTEL CORP·Filed 2017·Granted Dec 5, 2017·2 cites·8 claims
- 2577US2025149072A1Assemblies Comprising Memory Cells and Select Gates; and Methods of Forming AssembliesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2675US2025053301A1Programming selective word lines during an erase operation in a memory deviceMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2774US10614862B2Assemblies comprising memory cells and select gatesMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 7, 2020·2 cites·27 claims
- 2873US11925022B2Microelectronic and semiconductor devices with a tunneling structure free of high-γ material by a select gate structure, and related methodsMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 5, 2024·0 cites·23 claims
- 2972US12131028B2Programming selective word lines during an erase operation in a memory deviceMICRON TECHNOLOGY INC·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 3072US11977774B2Charge loss mitigation throughout memory device lifecycle by proactive window shiftMICRON TECHNOLOGY INC·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 3171US12260916B2Partial block handling in a non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2024·Granted Mar 25, 2025·0 cites·20 claims
- 3270US11961581B2Assemblies comprising memory cells and select gates; and methods of forming assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 16, 2024·0 cites·20 claims
- 3370US9570677B2Memory cells, integrated devices, and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 14, 2017·1 cites·20 claims
- 3469US11664079B2Intervallic dynamic start voltage and program verify sampling in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted May 30, 2023·0 cites·20 claims
- 3568US12423002B2Selectively programming retired wordlines of a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 23, 2025·0 cites·17 claims
- 3666US10102905B2Memory cells having a plurality of resistance variable materialsMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 16, 2018·1 cites·20 claims
- 3765US11170826B2Assemblies comprising memory cells and select gates; and methods of forming assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 9, 2021·0 cites·14 claims
- 3864US11776633B2Apparatus and methods for determining data states of memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 3, 2023·0 cites·20 claims
- 3964US11211399B2Electronic apparatus with an oxide-only tunneling structure by a select gate tier, and related methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 28, 2021·0 cites·29 claims
- 4063US11526277B2Adjustable NAND write performanceMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 13, 2022·0 cites·24 claims
- 4162US2025157549A1Transient and stable state read operations of a memory deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4261US10658428B2Methods of operating memory devices and apparatusesMICRON TECHNOLOGY INC·Filed 2018·Granted May 19, 2020·0 cites·18 claims
- 4358US12224016B2Transient and stable state read operations of a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 11, 2025·0 cites·25 claims
- 4458US2025342898A1Adaptive block family error avoidance in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4553US10460798B2Memory cells having a plurality of resistance variable materialsMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 4650US9679641B2Memory cells having a plurality of resistance variable materialsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 13, 2017·0 cites·20 claims
- 4750US2024185926A1Writing user data into storage memoryMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 4848US10872670B2Methods for determining data states of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 22, 2020·0 cites·20 claims
- 4947US8637847B2Memory cells having a plurality of heatersRUSSO UGO·Filed 2011·Granted Jan 28, 2014·0 cites·28 claims
- 5047US2024427500A1Dynamic adjustment of threshold voltage offsets for wordline groupsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →