Inventor · disambiguated record
Ujwal Radhakrishna
Also filed as: RADHAKRISHNA UJWAL
7 granted patents·15 pending applications·2 citations·filing 2017–2024
72Inventor score
Top patents by PatentIndex Score
22 records- 0178US11996254B2Active metal fuses for DC-EOS and surge protectionTEXAS INSTRUMENTS INC·Filed 2023·Granted May 28, 2024·0 cites·15 claims
- 0275US12211807B2Semiconductor doped region with biased isolated membersTEXAS INSTRUMENTS INC·Filed 2023·Granted Jan 28, 2025·0 cites·19 claims
- 0372US2025087583A1Fail-open isolatorTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0471US11721510B2Active metal fuses for DC-EOS and surge protectionTEXAS INSTRUMENTS INC·Filed 2021·Granted Aug 8, 2023·0 cites·25 claims
- 0570US2024088647A1Methods and apparatus to improve performance of power path protection devicesTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 0668US10439059B2High-linearity transistorsMASSACHUSETTS INST TECHNOLOGY·Filed 2017·Granted Oct 8, 2019·2 cites·24 claims
- 0765US12183672B2Fail-open isolatorTEXAS INSTRUMENTS INC·Filed 2022·Granted Dec 31, 2024·0 cites·18 claims
- 0865US11824345B2Methods and apparatus to improve performance of power path protection devicesTEXAS INSTRUMENTS INC·Filed 2020·Granted Nov 21, 2023·0 cites·19 claims
- 0960US11830830B2Semiconductor doped region with biased isolated membersTEXAS INSTRUMENTS INC·Filed 2021·Granted Nov 28, 2023·0 cites·26 claims
- 1059US2025142866A1Self-aligned gate structureTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1157US2025301680A1Semiconductor devices in integrated circuit having different threshold voltagesTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1257US2025098266A1Group iii-n device including source contact connected to substrate through trenchTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1357US2025120157A1Semiconductor device with slanted field plateTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1456US2025287626A1Semiconductor device with drain electrical contact forming junctions having different energy barrier heights to drain layerTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1556US2025301778A1Semiconductor devices in integrated circuit having different threshold voltagesTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1656US2025169156A1High electron mobility transistor with integrated diodeTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1756US2025311409A1Etch stop architectures for power device and passive componentsTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1855US2025107131A1Gate structure of semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1954US2025048667A1Semiconductor device with gate electrical contact forming junctions having different energy barrier heights to gate layerTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2053US2024405024A1Integrated devices with conductive barrier structureTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2152US2024405078A1Integrated devices with conductive barrier structureTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2239US2022140826A1Temperature control for power devicesTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →