Inventor · disambiguated record
Ulrich M. Goesele
Also filed as: GOESELE ULRICH · GOESELE ULRICH M
9 granted patents·1 pending application·1,687 citations·filing 1985–2007
93Inventor score
Top patents by PatentIndex Score
10 records- 0194US6150239AMethod for the transfer of thin layers monocrystalline material onto a desirable substrateMAX PLANCK SOC·Filed 1998·Granted Nov 21, 2000·263 cites·31 claims
- 0292US5877070AMethod for the transfer of thin layers of monocrystalline material to a desirable substrateMAX PLANCK SOCIETY·Filed 1997·Granted Mar 2, 1999·899 cites·20 claims
- 0392US4962879AMethod for bubble-free bonding of silicon wafersUNIV DUKE·Filed 1989·Granted Oct 16, 1990·107 cites·38 claims
- 0492US4883215AMethod for bubble-free bonding of silicon wafersUNIV DUKE·Filed 1988·Granted Nov 28, 1989·110 cites·32 claims
- 0589US5024723AMethod of producing a thin silicon on insulator layer by wafer bonding and chemical thinningGOESELE ULRICH M·Filed 1990·Granted Jun 18, 1991·131 cites·17 claims
- 0685US5915193AMethod for the cleaning and direct bonding of solidsFiled 1995·Granted Jun 22, 1999·82 cites·7 claims
- 0776US4672738AMethod for the manufacture of a pn junction with high breakdown voltageSIEMENS AG·Filed 1985·Granted Jun 16, 1987·48 cites·10 claims
- 0864US5206523AMicroporous crystalline silicon of increased band-gap for semiconductor applicationsGOESELE ULRICH M·Filed 1991·Granted Apr 27, 1993·39 cites·6 claims
- 0944US2010065810A1Method Of Synthesizing Semiconductor Nanostructures And Nanostructures Synthesized By The MethodMAX PLANCK GESSELLSCHAFT ZUR F·Filed 2007·Application pending·0 cites
- 1041US4907056ASemiconductor component comprising a planar pn-junctionSIEMENS AG·Filed 1988·Granted Mar 6, 1990·8 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →