Inventor · disambiguated record
Ulrich Schwabe
Also filed as: SCHWABE ULRICH · SCHWABE ULRICH K W
31 granted patents·1 pending application·1,042 citations·filing 1974–2024
98Inventor score
Top patents by PatentIndex Score
32 records- 0199US4510670AMethod for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductorsSIEMENS AG·Filed 1983·Granted Apr 16, 1985·204 cites·14 claims
- 0298US4257832AProcess for producing an integrated multi-layer insulator memory cellSIEMENS AG·Filed 1979·Granted Mar 24, 1981·157 cites·9 claims
- 0395US4342149AMethod of making very short channel length MNOS and MOS devices by double implantation of one conductivity type subsequent to other type implantationSIEMENS AG·Filed 1980·Granted Aug 3, 1982·131 cites·4 claims
- 0492US4306353AProcess for production of integrated MOS circuits with and without MNOS memory transistors in silicon-gate technologySIEMENS AG·Filed 1980·Granted Dec 22, 1981·93 cites·6 claims
- 0587US5299131AMethod of correcting the rotating speed of vehicle wheels sensed by wheel sensorsBOSCH GMBH ROBERT·Filed 1988·Granted Mar 29, 1994·69 cites·26 claims
- 0682US9118215B2High voltage energy harvesting and conversion renewable energy utility size electric power systems and visual monitoring and control systems for said systemsFISHMAN OLEG S·Filed 2011·Granted Aug 25, 2015·8 cites·17 claims
- 0780US9350166B2High voltage energy harvesting and conversion renewable energy utility size electric power systems and visual monitoring and control systems for said systemsFISHMAN OLEG S·Filed 2013·Granted May 24, 2016·7 cites·20 claims
- 0875US4505027AMethod of making MOS device using metal silicides or polysilicon for gates and impurity source for active regionsSIEMENS AG·Filed 1984·Granted Mar 19, 1985·45 cites·21 claims
- 0971US4434543AProcess for producing adjacent tubs implanted with dopant ions in the manufacture of LSI complementary MOS field effect transistorsSIEMENS AG·Filed 1982·Granted Mar 6, 1984·33 cites·15 claims
- 1070US4912543AIntegrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloySIEMENS AG·Filed 1984·Granted Mar 27, 1990·29 cites·5 claims
- 1170US4525920AMethod of making CMOS circuits by twin tub process and multiple implantationsSIEMENS AG·Filed 1984·Granted Jul 2, 1985·33 cites·14 claims
- 1269US4562638AMethod for the simultaneous manufacture of fast short channel and voltage-stable MOS transistors in VLSI circuitsSIEMENS AG·Filed 1984·Granted Jan 7, 1986·22 cites·3 claims
- 1369US3977925AMethod of localized etching of Si crystalsSIEMENS AG·Filed 1974·Granted Aug 31, 1976·15 cites·5 claims
- 1465US10483759B2Integrated multi-mode large-scale electric power support system for an electrical gridALENCON ACQUISITION CO LLC·Filed 2017·Granted Nov 19, 2019·2 cites·12 claims
- 1563US4740479AMethod for the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memoriesSIEMENS AG·Filed 1986·Granted Apr 26, 1988·28 cites·9 claims
- 1660US9627889B2High voltage energy harvesting and conversion renewable energy utility size electric power systems and visual monitoring and control systemsFISHMAN OLEG S·Filed 2012·Granted Apr 18, 2017·1 cites·27 claims
- 1759US4525378AMethod for manufacturing VLSI complementary MOS field effect circuitsSIEMENS AG·Filed 1984·Granted Jun 25, 1985·14 cites·7 claims
- 1858US4462149AMethod for producing integrated MOS field effect transistors with an additional track level of metal silicidesSIEMENS AG·Filed 1982·Granted Jul 31, 1984·20 cites·5 claims
- 1956US2024318847A1Monitoring device for predictive fault detectionTECTIO CORP·Filed 2024·Application pending·0 cites
- 2054US4110779AHigh frequency transistorSIEMENS AG·Filed 1976·Granted Aug 29, 1978·15 cites·6 claims
- 2153US4459741AMethod for producing VLSI complementary MOS field effect transistor circuitsSIEMENS AG·Filed 1982·Granted Jul 17, 1984·18 cites·8 claims
- 2251US4874717ASemiconductor circuit containing integrated bipolar and MOS transistors on a chip and method of producing sameSIEMENS AG·Filed 1988·Granted Oct 17, 1989·13 cites·11 claims
- 2351US4330850AMNOS Memory cellSIEMENS AG·Filed 1980·Granted May 18, 1982·11 cites·8 claims
- 2450US4640844AMethod for the manufacture of gate electrodes formed of double layers of metal silicides having a high melting point and doped polycrystalline siliconSIEMENS AG·Filed 1985·Granted Feb 3, 1987·18 cites·10 claims
- 2544US4323913AIntegrated semiconductor circuit arrangementSIEMENS AG·Filed 1979·Granted Apr 6, 1982·10 cites·2 claims
- 2642US4175983AProcess for the production of a high frequency transistorSIEMENS AG·Filed 1978·Granted Nov 27, 1979·8 cites·6 claims
- 2741US4459740AMethod for manufacturing VLSI complementary MOS field effect transistor circuits in silicon gate technologySIEMENS AG·Filed 1982·Granted Jul 17, 1984·11 cites·11 claims
- 2840US4143455AMethod of producing a semiconductor componentSIEMENS AG·Filed 1978·Granted Mar 13, 1979·8 cites·9 claims
- 2937US4603472AMethod of making MOS FETs using silicate glass layer as gate edge masking for ion implantationSIEMENS AG·Filed 1985·Granted Aug 5, 1986·8 cites·9 claims
- 3037US4014714AMethod of producing a monolithic semiconductor deviceSIEMENS AG·Filed 1975·Granted Mar 29, 1977·6 cites·9 claims
- 3130US5579235AMethod of monitoring rpm sensorsBOSCH GMBH ROBERT·Filed 1993·Granted Nov 26, 1996·4 cites·2 claims
- 3229US4253034AIntegratable semi-conductor memory cellSIEMENS AG·Filed 1978·Granted Feb 24, 1981·1 cites·1 claims
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