Inventor · disambiguated record
Umamaheswari Aghoram
Also filed as: AGHORAM UMAMAHESWARI
9 granted patents·4 pending applications·7 citations·filing 2010–2025
79Inventor score
Top patents by PatentIndex Score
13 records- 0181US2025318160A1Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection deviceTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 0279US12363926B2Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection deviceTEXAS INSTRUMENTS INC·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 0377US11075157B2IC having trench-based metal-insulator-metal capacitorTEXAS INSTRUMENTS INC·Filed 2019·Granted Jul 27, 2021·2 cites·22 claims
- 0477US8754497B2Strained LDMOS and demosDENISON MARIE·Filed 2010·Granted Jun 17, 2014·5 cites·14 claims
- 0570US11869986B2Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection deviceTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 9, 2024·0 cites·21 claims
- 0665US12336277B2Fin field-effect transistor (FinFET) with a high-K material field-platingTEXAS INSTRUMENTS INC·Filed 2021·Granted Jun 17, 2025·0 cites·21 claims
- 0764US11616011B2IC having trench-based metal-insulator-metal capacitorTEXAS INSTRUMENTS INC·Filed 2021·Granted Mar 28, 2023·0 cites·25 claims
- 0863US11081558B2LDMOS with high-k drain STI dielectricTEXAS INSTRUMENTS INC·Filed 2020·Granted Aug 3, 2021·0 cites·22 claims
- 0953US10593773B2LDMOS with high-k drain STI dielectricTEXAS INSTRUMENTS INC·Filed 2017·Granted Mar 17, 2020·0 cites·20 claims
- 1053US2024038580A1Locos or siblk to protect deep trench polysilicon in deep trench after sti processTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 1153US2024038579A1Die size reduction and deep trench density increase using deep trench isolation after shallow trench isolation integrationTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 1251US2024113102A1Buried trench capacitorTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 1344US10651039B2Polysilicon gate formation in CMOS transistorsTEXAS INSTRUMENTS INC·Filed 2017·Granted May 12, 2020·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →