Inventor · disambiguated record
Umamaheswara Vemulapati
Also filed as: VEMULAPATI UMAMAHESWARA
16 granted patents·2 pending applications·10 citations·filing 2015–2022
85Inventor score
Files withHITACHI ENERGY LTD7ABB POWER GRIDS SWITZERLAND AG4ABB SCHWEIZ AG4ABB TECHNOLOGY AG2HITACHI ENERGY SWITZERLAND AG1
Top patents by PatentIndex Score
18 records- 0186US11043943B2Switching of paralleled reverse conducting IGBT and wide bandgap switchABB POWER GRIDS SWITZERLAND AG·Filed 2019·Granted Jun 22, 2021·6 cites·20 claims
- 0270US11031473B2Silicon carbide superjunction power semiconductor device and method for manufacturing the sameABB POWER GRIDS SWITZERLAND AG·Filed 2019·Granted Jun 8, 2021·1 cites·20 claims
- 0368US9543305B2Reverse conducting power semiconductor deviceABB TECHNOLOGY AG·Filed 2016·Granted Jan 10, 2017·2 cites·19 claims
- 0461US9385223B2Reverse-conducting power semiconductor deviceABB TECHNOLOGY AG·Filed 2015·Granted Jul 5, 2016·1 cites·31 claims
- 0553US12513928B2Bidirectional thyristor deviceHITACHI ENERGY LTD·Filed 2021·Granted Dec 30, 2025·0 cites·15 claims
- 0650US12464749B2Power semiconductor deviceHITACHI ENERGY LTD·Filed 2021·Granted Nov 4, 2025·0 cites·20 claims
- 0748US2025015172A1Semiconductor device and method for operating a semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 0846US10566463B2Power semiconductor device with floating field ring terminationABB SCHWEIZ AG·Filed 2019·Granted Feb 18, 2020·0 cites·20 claims
- 0945US2024162295A1Gate-commuted thyristor cell with a base region having a varying thicknessHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 1044US11824091B2Integrated gate-commutated thyristor (IGCT)HITACHI ENERGY SWITZERLAND AG·Filed 2021·Granted Nov 21, 2023·0 cites·20 claims
- 1143US12426349B2Reverse conducting power semiconductor device and method for manufacturing the sameHITACHI ENERGY LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 1242US10629677B2Area efficient floating field ring terminationABB SCHWEIZ AG·Filed 2018·Granted Apr 21, 2020·0 cites·19 claims
- 1342US10461157B2Flat gate commutated thyristorABB SCHWEIZ AG·Filed 2018·Granted Oct 29, 2019·0 cites·17 claims
- 1441US11967638B2Segmented power diode structure with improved reverse recoveryHITACHI ENERGY LTD·Filed 2020·Granted Apr 23, 2024·0 cites·23 claims
- 1540US12432950B2Insulated gate bipolar transistor including trench Schottky electrodeHITACHI ENERGY LTD·Filed 2020·Granted Sep 30, 2025·0 cites·20 claims
- 1640US11056582B2Bidirectional phase controlled thyristor (BiPCT)—a new semiconductor device conceptABB POWER GRIDS SWITZERLAND AG·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 1740US10026732B2Bidirectional power semiconductorABB SCHWEIZ AG·Filed 2017·Granted Jul 17, 2018·0 cites·20 claims
- 1839US11107740B2Power semiconductor moduleABB POWER GRIDS SWITZERLAND AG·Filed 2017·Granted Aug 31, 2021·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →