Inventor · disambiguated record
Ung Hwan Pi
Also filed as: PI UNG H · PI UNG HWAN
55 granted patents·12 pending applications·146 citations·filing 2004–2024
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD36LEE SUNG-CHUL14PI UNG-HWAN6KOREA ELECTRONICS TELECOMM4KIM KWANG SEOK2
Top patents by PatentIndex Score
67 records- 0196US11706998B2Magnetic tunnel junction and magnetic memory device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·19 claims
- 0296US11088319B2Magnetic tunnel junction including a free layer structure and magnetic memory device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 10, 2021·6 cites·20 claims
- 0394US9508925B2Magnetic memory devicePI UNG-HWAN·Filed 2015·Granted Nov 29, 2016·11 cites·19 claims
- 0491US8427246B2Oscillators and methods of manufacturing and operating the sameLEE SUNG-CHUL·Filed 2011·Granted Apr 23, 2013·9 cites·24 claims
- 0589US8598957B2Oscillators and methods of manufacturing and operating the sameLEE SUNG-CHUL·Filed 2011·Granted Dec 3, 2013·10 cites·22 claims
- 0687US11121309B2Magnetic memory devices including magnetic tunnel junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 14, 2021·2 cites·20 claims
- 0787US10910552B2Magnetic memory device, method for manufacturing the same, and substrate treating apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·4 cites·12 claims
- 0887US9230623B2Magnetic memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·6 cites·33 claims
- 0987US7436033B2Tri-gated molecular field effect transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Oct 14, 2008·12 cites·8 claims
- 1085US9236105B2Magnetic memory devices and methods of writing data to the samePI UNG-HWAN·Filed 2014·Granted Jan 12, 2016·9 cites·24 claims
- 1185US8421545B2Oscillators and methods of operating the sameKIM KWANG-SEOK·Filed 2011·Granted Apr 16, 2013·6 cites·22 claims
- 1284US8729647B2Thermally stable magnetic tunnel junction cell and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted May 20, 2014·7 cites·20 claims
- 1383US12010925B2Magnetic memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·5 claims
- 1481US11610940B2Magnetic memory devices having a first magnetic pattern and multiple second magnetic patterns thereonSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 21, 2023·1 cites·20 claims
- 1578US8614014B2Tracks including magnetic layer and magnetic memory devices comprising the sameLEE SUNG-CHUL·Filed 2010·Granted Dec 24, 2013·4 cites·25 claims
- 1678US7924593B2Information storage devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 12, 2011·10 cites·25 claims
- 1775US11805659B2Magnetic memory devices having a first magnetic pattern and multiple second magnetic patterns thereonSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 31, 2023·0 cites·20 claims
- 1875US9530478B2Memory device using spin hall effect and methods of manufacturing and operating the memory devicePI UNG-HWAN·Filed 2014·Granted Dec 27, 2016·5 cites·10 claims
- 1974US8847692B2Oscillators and method of operating the samePI UNG-HWAN·Filed 2011·Granted Sep 30, 2014·3 cites·16 claims
- 2073US12014762B2Semiconductor memory device with spin-orbit coupling channelSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·10 claims
- 2172US7413973B2Method for manufacturing nano-gap electrode deviceKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Aug 19, 2008·4 cites·11 claims
- 2271US7537883B2Method of manufacturing nano size-gap electrode deviceKOREA ELECTRONICS TELECOMM·Filed 2006·Granted May 26, 2009·3 cites·11 claims
- 2370US10128433B2Magnetic memory devicePI UNG HWAN·Filed 2016·Granted Nov 13, 2018·1 cites·18 claims
- 2469US12245518B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
- 2568US2025157516A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2666US11727973B2Magnetic property measuring systems, methods for measuring magnetic properties, and methods for manufacturing magnetic memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·6 claims
- 2765US11588100B2Magnetic memory devices including magnetic tunnel junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·18 claims
- 2865US8130530B2Information storage devices using magnetic domain wall movement and methods of operating the samePI UNG-HWAN·Filed 2009·Granted Mar 6, 2012·5 cites·38 claims
- 2965US7138331B2Method for manufacturing nano-gap electrode deviceKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Nov 21, 2006·10 cites·4 claims
- 3064US11935573B2Magnetic memory devices having multiple magnetic layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 3164US10825497B2Semiconductor device including spin-orbit torque line and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 3, 2020·1 cites·20 claims
- 3264US10553790B1Method of manufacuring a magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 4, 2020·1 cites·20 claims
- 3363US11176982B2Semiconductor device including spin-orbit torque line and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 16, 2021·0 cites·14 claims
- 3463US9437654B2Magnetic memory devicesLEE SUNG-CHUL·Filed 2015·Granted Sep 6, 2016·1 cites·18 claims
- 3562US11004900B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 11, 2021·1 cites·20 claims
- 3661US11545616B2Magnetic memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 3, 2023·0 cites·22 claims
- 3761US8803266B2Storage nodes, magnetic memory devices, and methods of manufacturing the sameKIM KWANG-SEOK·Filed 2011·Granted Aug 12, 2014·1 cites·13 claims
- 3861US8254164B2Semiconductor device using magnetic domain wall movementLEE SUNG-CHUL·Filed 2008·Granted Aug 28, 2012·4 cites·20 claims
- 3960US11205679B2Magnetic memory device including a free layer and a pinned layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 21, 2021·0 cites·19 claims
- 4059US2025212419A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4158US12457908B2Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
- 4257US12165683B2Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 4357US11348626B2Magnetic memory devices having multiple magnetic layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·0 cites·19 claims
- 4457US8537506B2Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangementBAE JI-YOUNG·Filed 2010·Granted Sep 17, 2013·1 cites·12 claims
- 4557US8233305B2Magnetic structures, information storage devices including magnetic structures, methods of manufacturing and methods of operating the sameLEE SUNG-CHUL·Filed 2009·Granted Jul 31, 2012·3 cites·25 claims
- 4656US8525601B2Oscillators using magnetic domain wall and methods of operating the sameLEE SUNG-CHUL·Filed 2009·Granted Sep 3, 2013·1 cites·23 claims
- 4753US12096639B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 4852US8144503B2Information storage device and method of operating the sameLEE SUNG-CHUL·Filed 2009·Granted Mar 27, 2012·2 cites·23 claims
- 4952US2025210121A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 5051US12315542B2Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →