Inventor · disambiguated record
Uwe Kellner-Werdehausen
Also filed as: KELLNER-WERDEHAUSEN UWE
14 granted patents·5 pending applications·19 citations·filing 1995–2025
86Inventor score
Files withINFINEON TECHNOLOGIES AG7INFINEON TECH BIPOLAR GMBH & CO KG6BARTHELMESS REINER2SCHULZE HANS-JOACHIM2KELLNER-WERDEHAUSEN UWE1
Top patents by PatentIndex Score
19 records- 0175US7884389B2Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production methodINFINEON TECHNOLOGIES AG·Filed 2007·Granted Feb 8, 2011·5 cites·15 claims
- 0275US7696528B2Thyristor which can be triggered electrically and by radiationINFINEON TECHNOLOGIES AG·Filed 2006·Granted Apr 13, 2010·6 cites·22 claims
- 0369US12342581B2Method and device for producing an edge structure of a semiconductor componentINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2022·Granted Jun 24, 2025·0 cites·13 claims
- 0469US2025254933A1Device for Producing an Edge Structure of a Semiconductor ComponentINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2025·Application pending·0 cites
- 0563US9269769B2Semiconductor component including a short-circuit structureSCHULZE HANS-JOACHIM·Filed 2008·Granted Feb 23, 2016·1 cites·25 claims
- 0660US7687826B2Thyristor with recovery protectionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 30, 2010·2 cites·22 claims
- 0749US9876004B2Semiconductor component including a short-circuit structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 23, 2018·0 cites·13 claims
- 0848US8415710B2Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production methodSCHULZE HANS-JOACHIM·Filed 2011·Granted Apr 9, 2013·0 cites·20 claims
- 0946US11973147B2Power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limitingINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2022·Granted Apr 30, 2024·0 cites·18 claims
- 1046US2009057714A1Thyristor and methods for producing a thyristorINFINEON TECHNOLOGIES AG·Filed 2008·Application pending·0 cites
- 1144US2024063265A1Semiconductor deviceINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2023·Application pending·0 cites
- 1240US8018064B2Arrangement including a semiconductor device and a connecting elementINFINEON TECHNOLOGIES AG·Filed 2007·Granted Sep 13, 2011·0 cites·38 claims
- 1340US2006267104A1Thyristor with integrated resistance and method for producing itINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1437US8946867B2Semiconductor component with optimized edge terminationBARTHELMESS REINER·Filed 2012·Granted Feb 3, 2015·0 cites·9 claims
- 1536US6963088B2Semiconductor componentKELLNER-WERDEHAUSEN UWE·Filed 2004·Granted Nov 8, 2005·1 cites·20 claims
- 1635US11664445B2Short-circuit semiconductor component and method for operating itINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2020·Granted May 30, 2023·0 cites·25 claims
- 1734US2005258448A1Thyristor component with improved blocking capabilities in the reverse directionBARTHELMESS REINER·Filed 2005·Application pending·0 cites
- 1832US11646365B2Short-circuit semiconductor component and method for operating sameINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2019·Granted May 9, 2023·0 cites·18 claims
- 1928US5661079AContacting process using O-SIPOS layerTELEFUNKEN MICROELECTRON·Filed 1995·Granted Aug 26, 1997·4 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →