Inventor · disambiguated record
Uway Tseng
Also filed as: TSENG UWAY
17 granted patents·6 pending applications·171 citations·filing 2000–2012
94Inventor score
Top patents by PatentIndex Score
23 records- 0185US8502335B2CMOS image sensor big via bonding pad application for AlCu ProcessTSENG UWAY·Filed 2009·Granted Aug 6, 2013·15 cites·20 claims
- 0285US8344471B2CMOS image sensor big via bonding pad application for AICu processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 1, 2013·11 cites·20 claims
- 0384US6746968B1Method of reducing charge loss for nonvolatile memoryMACRONIX INT CO LTD·Filed 2003·Granted Jun 8, 2004·32 cites·9 claims
- 0482US6548425B2Method for fabricating an ONO layer of an NROMMACRONIX INT CO LTD·Filed 2001·Granted Apr 15, 2003·27 cites·12 claims
- 0581US7884013B2Dual damascene with via linerTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Feb 8, 2011·10 cites·15 claims
- 0681US7387961B2Dual damascene with via linerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 17, 2008·11 cites·29 claims
- 0777US6562682B1Method for forming gateMACRONIX INT CO LTD·Filed 2002·Granted May 13, 2003·23 cites·20 claims
- 0876US8716871B2Big via structureTSENG UWAY·Filed 2012·Granted May 6, 2014·5 cites·20 claims
- 0975US8680635B2CMOS image sensor big via bonding pad application for AICu processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 25, 2014·3 cites·20 claims
- 1070US8633086B2Power devices having reduced on-resistance and methods of their manufactureKALNITSKY ALEX·Filed 2009·Granted Jan 21, 2014·3 cites·24 claims
- 1163US6713388B2Method of fabricating a non-volatile memory device to eliminate charge lossMACRONIX INT CO LTD·Filed 2002·Granted Mar 30, 2004·11 cites·17 claims
- 1258US6960506B2Method of fabricating a memory device having a self-aligned contactMACRONIX INT CO LTD·Filed 2003·Granted Nov 1, 2005·8 cites·21 claims
- 1350US7199007B2Non-volatile memory device having a nitride barrier to reduce the fast erase effectMACRONIX INT CO LTD·Filed 2004·Granted Apr 3, 2007·4 cites·14 claims
- 1449US6734098B2Method for fabricating cobalt salicide contactMACRONIX INT CO LTD·Filed 2002·Granted May 11, 2004·4 cites·13 claims
- 1549US6413840B1Method of gettering layer for improving chemical-mechanical polishing process in flash memory production and semiconductor structure thereofMACRONIX INT CO LTD·Filed 2001·Granted Jul 2, 2002·3 cites·18 claims
- 1649US2007178664A1Shallow trench isolation structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 1746US2007020877A1Shallow trench isolation structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 1844US7400011B2Non-volatile memory device having a nitride barrier to reduce the fast erase effectMACRONIX INT CO LTD·Filed 2007·Granted Jul 15, 2008·0 cites·13 claims
- 1943US6511907B1Method for forming a low loss dielectric layer in the tungsten chemical mechanic grinding processMACRONIX INT CO LTD·Filed 2001·Granted Jan 28, 2003·1 cites·14 claims
- 2037US2007102748A1Gate electrode and MOS transistor including gate and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 2135US2002072217A1Method for improving contact reliability in semiconductor devicesMACRONIX INT CO LTD·Filed 2000·Application pending·0 cites
- 2233US2002123219A1Method of forming a via of a dual damascene with low resistanceFiled 2001·Application pending·0 cites
- 2332US2002119618A1Method for forming contacts of memory devices using an etch stop layerMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →