Inventor · disambiguated record
Uygar E. Avci
Also filed as: AVCI UYGAR · AVCI UYGAR E
127 granted patents·107 pending applications·313 citations·filing 2006–2024
99Inventor score
Top patents by PatentIndex Score
234 records- 0197US11063131B2Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineeringINTEL CORP·Filed 2019·Granted Jul 13, 2021·31 cites·11 claims
- 0297US10121792B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2017·Granted Nov 6, 2018·9 cites·1 claims
- 0397US9786667B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2017·Granted Oct 10, 2017·9 cites·20 claims
- 0497US9646970B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2016·Granted May 9, 2017·9 cites·20 claims
- 0597US9520399B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2016·Granted Dec 13, 2016·11 cites·16 claims
- 0697US9418997B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2016·Granted Aug 16, 2016·11 cites·16 claims
- 0797US9275999B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2015·Granted Mar 1, 2016·13 cites·18 claims
- 0897US8980707B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2013·Granted Mar 17, 2015·19 cites·17 claims
- 0997US8569812B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2012·Granted Oct 29, 2013·25 cites·4 claims
- 1097US8217435B2Floating body memory cell having gates favoring different conductivity type regionsCHANG PETER L D·Filed 2006·Granted Jul 10, 2012·44 cites·11 claims
- 1195US11257822B2Three-dimensional nanoribbon-based dynamic random-access memoryINTEL CORP·Filed 2019·Granted Feb 22, 2022·9 cites·26 claims
- 1294US11355505B2Vertical backend transistor with ferroelectric materialINTEL CORP·Filed 2017·Granted Jun 7, 2022·11 cites·26 claims
- 1394US10651182B2Three-dimensional ferroelectric NOR-type memoryINTEL CORP·Filed 2018·Granted May 12, 2020·15 cites·22 claims
- 1494US10381350B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2018·Granted Aug 13, 2019·4 cites·20 claims
- 1592US10916547B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2020·Granted Feb 9, 2021·2 cites·20 claims
- 1692US9209288B2Reduced scale resonant tunneling field effect transistorINTEL CORP·Filed 2012·Granted Dec 8, 2015·10 cites·14 claims
- 1792US8890120B2Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETsKOTLYAR ROZA·Filed 2012·Granted Nov 18, 2014·13 cites·14 claims
- 1891US10832761B2Polarization gate stack SRAMINTEL CORP·Filed 2020·Granted Nov 10, 2020·3 cites·20 claims
- 1989US10720434B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2019·Granted Jul 21, 2020·2 cites·20 claims
- 2088US11107908B2Transistors with metal source and drain contacts including a Heusler alloyINTEL CORP·Filed 2016·Granted Aug 31, 2021·5 cites·21 claims
- 2187US11316027B2Relaxor ferroelectric capacitors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 2287US11138499B2Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuitsINTEL CORP·Filed 2018·Granted Oct 5, 2021·5 cites·19 claims
- 2386US11581417B2Improper ferroelectric active and passive devicesINTEL CORP·Filed 2018·Granted Feb 14, 2023·4 cites·18 claims
- 2485US12495559B2Capacitor with dual dielectric layersINTEL CORP·Filed 2021·Granted Dec 9, 2025·1 cites·14 claims
- 2584US12396254B2Stacked 2D CMOS with inter metal layersINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 2684US11056593B2Semiconductor devices with metal contacts including crystalline alloysINTEL CORP·Filed 2017·Granted Jul 6, 2021·3 cites·19 claims
- 2784US9985611B2Tunnel field-effect transistor (TFET) based high-density and low-power sequentialINTEL CORP·Filed 2015·Granted May 29, 2018·4 cites·20 claims
- 2883US11785759B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2022·Granted Oct 10, 2023·0 cites·25 claims
- 2983US11171145B2Memory devices based on capacitors with built-in electric fieldINTEL CORP·Filed 2018·Granted Nov 9, 2021·3 cites·25 claims
- 3082US10998339B2One transistor and ferroelectric FET based memory cellINTEL CORP·Filed 2016·Granted May 4, 2021·3 cites·20 claims
- 3181US12396217B2Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabricationINTEL CORP·Filed 2020·Granted Aug 19, 2025·1 cites·13 claims
- 3281US9911835B2Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETsINTEL CORP·Filed 2017·Granted Mar 6, 2018·2 cites·21 claims
- 3381US9361059B2Architecture for seamless integrated display systemINTEL CORP·Filed 2012·Granted Jun 7, 2016·5 cites·18 claims
- 3480US12278289B2TMD inverted nanowire integrationINTEL CORP·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 3580US11355504B2Anti-ferroelectric capacitor memory cellINTEL CORP·Filed 2018·Granted Jun 7, 2022·2 cites·25 claims
- 3680US11335793B2Vertical tunneling field-effect transistorsINTEL CORP·Filed 2018·Granted May 17, 2022·2 cites·19 claims
- 3779US11605624B2Ferroelectric resonatorINTEL CORP·Filed 2019·Granted Mar 14, 2023·2 cites·25 claims
- 3878US11646374B2Ferroelectric transistors to store multiple states of resistances for memory cellsINTEL CORP·Filed 2018·Granted May 9, 2023·2 cites·25 claims
- 3978US11239361B2Multilayer insulator stack for ferroelectric transistor and capacitorINTEL CORP·Filed 2017·Granted Feb 1, 2022·2 cites·22 claims
- 4077US11462540B2Floating body memory cell having gates favoring different conductivity type regionsINTEL CORP·Filed 2021·Granted Oct 4, 2022·0 cites·25 claims
- 4176US11450675B2One transistor and one ferroelectric capacitor memory cells in diagonal arrangementsINTEL CORP·Filed 2018·Granted Sep 20, 2022·2 cites·25 claims
- 4275US10734378B2Transistor threshold voltage variation optimizationINTEL CORP·Filed 2016·Granted Aug 4, 2020·2 cites·19 claims
- 4374US12113117B2Piezo-resistive transistor based resonator with ferroelectric gate dielectricINTEL CORP·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 4474US9997227B2Non-volatile ferroelectric logic with granular power-gatingINTEL CORP·Filed 2015·Granted Jun 12, 2018·2 cites·8 claims
- 4574US2025006434A1Ferroelectric capacitor with insulating thin filmINTEL CORP·Filed 2024·Application pending·0 cites
- 4674US2022328663A1Tunneling field effect transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 4772US10261923B2Configurable interconnect apparatus and methodINTEL CORP·Filed 2017·Granted Apr 16, 2019·1 cites·17 claims
- 4871US11862715B2Vertical tunneling field-effect transistorsINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 4971US11727260B2Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuitsINTEL CORP·Filed 2021·Granted Aug 15, 2023·0 cites·19 claims
- 5071US11322504B2Ferroelectric-capacitor integration using novel multi-metal-level interconnect with replaced dielectric for ultra-dense embedded SRAM in state-of-the-art CMOS technologyINTEL CORP·Filed 2018·Granted May 3, 2022·1 cites·25 claims
Showing the top 50 of 234 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Uygar E. Avci files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →