Inventor · disambiguated record
Varatharajan Rengarajan
Also filed as: RENGARAJAN VARATHARAJAN
11 granted patents·7 pending applications·38 citations·filing 2005–2024
87Inventor score
Top patents by PatentIndex Score
18 records- 0196US10793972B1High quality silicon carbide crystals and method of making the sameII VI DELAWARE INC·Filed 2018·Granted Oct 6, 2020·15 cites·18 claims
- 0294US9090989B2Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereofII VI INC·Filed 2013·Granted Jul 28, 2015·8 cites·21 claims
- 0386US2024150931A1Large diameter silicon carbide single crystals and apparatus and method of manufacture thereofII VI ADVANCED MAT LLC·Filed 2024·Application pending·0 cites
- 0481US9580837B2Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source materialII VI INC·Filed 2014·Granted Feb 28, 2017·2 cites·16 claims
- 0580US11035054B2Large diameter silicon carbide single crystals and apparatus and method of manufacture thereofII VI DELAWARE INC·Filed 2019·Granted Jun 15, 2021·2 cites·4 claims
- 0679US8741413B2Large diameter, high quality SiC single crystals, method and apparatusII VI INC·Filed 2013·Granted Jun 3, 2014·4 cites·27 claims
- 0778US2024352617A1Vanadium-compensated 4h and 6h single crystals of optical grade, and silicon carbide crystals and methods for producing sameII VI ADVANCED MAT LLC·Filed 2024·Application pending·0 cites
- 0877US11905618B2Large diameter silicon carbide single crystals and apparatus and method of manufacture thereofII VI DELAWARE INC·Filed 2021·Granted Feb 20, 2024·0 cites·17 claims
- 0977US9228274B2Axial gradient transport growth process and apparatus utilizing resistive heatingRENGARAJAN VARATHARAJAN·Filed 2009·Granted Jan 5, 2016·5 cites·7 claims
- 1070US12060650B2Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing sameII VI DELAWARE INC·Filed 2021·Granted Aug 13, 2024·0 cites·8 claims
- 1170USRE46315ELarge diameter, high quality SiC single crystals, method and apparatusII VI INC·Filed 2014·Granted Feb 21, 2017·2 cites·27 claims
- 1267US12006591B2Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second materialII VI DELAWARE INC·Filed 2020·Granted Jun 11, 2024·0 cites·13 claims
- 1367US2017321345A1Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture ThereofII VI INC·Filed 2017·Application pending·0 cites
- 1462USRE48378EVanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereofII VI DELAWARE INC·Filed 2017·Granted Jan 5, 2021·0 cites·28 claims
- 1556US2016097143A1Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizing Resistive HeatingII VI INC·Filed 2015·Application pending·0 cites
- 1655US2022049373A1Sic single crystal(s) doped from gas phaseII VI DELAWARE INC·Filed 2021·Application pending·0 cites
- 1741US2012285370A1Sublimation growth of sic single crystalsGUPTA AVINASH K·Filed 2010·Application pending·0 cites
- 1839US2006018816A1Diluted magnetic semiconducting ZnO single crystalCERMET INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →